Datasheet > BAT42R0G

BAT42R0G

更新时间： 2024-11-29 01:14:31

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描述
Hermetically Sealed Glass Fast Switching Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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BAT42R0G 数据手册

BAT42 / BAT43

Taiwan Semiconductor

Small Signal Product

Hermetically Sealed Glass Fast Switching Schottky Barrier Diode

FEATURES

- Low forward voltage drop

- Through-hole device type mounting

- Hermetically sealed glasss

- Compression bonded construction

- Solder hot dip tin (Sn) lead finish

- All external surfaces are corrosion resistant and

leads are readily solderable

DO-35

Hermetically Sealed Glass

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

VALUE

SYMBOL

P_D

UNIT

Power Dissipation

200

Repetitive Peak Reverse Voltage

Maximum DC Blocking Voltage

V_RRM

V_R

Average Forward Rectified Current

Peak Forward Surge Current

I_F(AV)

200

I_FSM

^oC

Operating and Storage Temperature Range

T_{J ,}T_STG

-65 to +125

PARAMETER

MIN

MAX

SYMBOL

UNIT

I_R=100μA

I_F=200mA

I_F=10mA

I_F=50mA

I_F=200mA

I_F=2mA

B_V

Breakdown Voltage

1.00

0.40

0.65

1.00

0.33

0.45

BAT42

Forward Voltage Drop All Types

BAT43

V_F

0.26

I_F=15mA

V_R=25V

I_R

C_J

t_rr

500

Maximum Peak Reverse Current

V_R=1V, f=1.0MHz

(Note 1)

7 (Typ)

5 (Typ)

Junction Capacitance

Reverse Recovery Time

Note 1: Reverse recovery test conditions: I_F=I_R=10mA, I_RR=1mA, R_L=100Ω

Document Number: DS_S1412008

Version: C14

12 3 4

中文翻译

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