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BAT41-09P6FILM PDF预览

BAT41-09P6FILM

更新时间: 2024-02-12 20:58:58
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管小信号肖特基二极管测试光电二极管
页数 文件大小 规格书
2页 128K
描述
Low capacitance small signal Schottky diodes

BAT41-09P6FILM 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.63
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.45 VJESD-30 代码:R-PDSO-F6
JESD-609代码:e4湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向电流:20 µA
反向测试电压:50 V子类别:Other Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

BAT41-09P6FILM 数据手册

 浏览型号BAT41-09P6FILM的Datasheet PDF文件第2页 
BAT41  
Small-Signal Diode  
Schottky Diode  
Features  
For general purpose applications.  
This diode features low turn-on voltage and high breakdown  
voltage. This device is protected by a PN junction guard ring  
against excessive voltage, such as electrostatic discharges  
This diode is also available in the MiniMELF case with type  
designation LL41.  
Mechanical Data  
Case: DO-35 Glass Case  
Weight: approx. 0.13g  
Maximum Ratings and Thermal Characteristics  
(Ratings at 25oC ambient temperature unless otherwise specified.)  
Parameter  
Symbol  
Value  
Unit  
Repetitive peak reverse voltage  
VRRM  
IF  
100  
Volts  
mA  
Forward continuous current at Tamb=25oC  
100 (1)  
Repetitive peak forward current  
IFRM  
350 (1)  
mA  
at tp<1s, @<0.5, Tamb=25oC  
Surge forward current at tp=10ms, Tamb=25oC  
Power dissipation at Tamb=25oC  
Thermal resistance junction to ambient air  
Junction temperature  
IFSM  
Ptot  
750 (1)  
400 (1)  
mA  
mW  
oC/W  
oC  
RθJA  
300 (1)  
T
125  
j
Ambient operating temperature range  
Storage temperature range  
Tamb  
TS  
-65 to +125  
-65 to +150  
oC  
oC  
Electrical Characteristics  
(TJ=25oC unless otherwise noted.)  
Parameter  
Symbol  
V(BR)R  
IR  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
Reverse breakdown voltage (2)  
Leakage current (2)  
IR=100uA  
100  
110  
-
Volts  
VR=50V, T=25OC  
-
-
-
-
100  
20  
nA  
uA  
j
VR=50V, T=100OC  
j
IF=1mA  
IF=200mA  
-
-
0.40  
-
0.45  
1.0  
Forward voltage (2)  
Capacitance  
VF  
Ctot  
trr  
Volt  
pF  
VR=1V, f=1MHz  
-
-
2
5
-
-
IF=10mA, IR=10mA,  
I =1mA, RL=100  
ns  
Reverse recovery time  
rr  
Notes:  
1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature  
2. Pulse test, tp=300uS  
678  

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