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BAT41RL PDF预览

BAT41RL

更新时间: 2024-02-22 17:59:25
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管
页数 文件大小 规格书
4页 51K
描述
0.1A, 100V, SILICON, SIGNAL DIODE, DO-35

BAT41RL 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT PACKAGE-2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.41外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-XALF-W2元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:0.1 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.1 W最大重复峰值反向电压:100 V
表面贴装:NO技术:SCHOTTKY
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAT41RL 数据手册

 浏览型号BAT41RL的Datasheet PDF文件第2页浏览型号BAT41RL的Datasheet PDF文件第3页浏览型号BAT41RL的Datasheet PDF文件第4页 
BAT41  
®
SMALL SIGNAL SCHOTTKY DIODE  
DESCRIPTION  
General purpose metal to silicon diode featuring  
very low turn-on voltage and fast switching.  
This device has integrated protection against ex-  
cessive voltage such as electrostatic discharges.  
DO-35  
ABSOLUTE RATINGS (limiting values)  
Symbol  
VRRM  
IF  
Parameter  
Repetitive Peak Reverse Voltage  
Value  
Unit  
V
100  
100  
350  
Forward Continuous Current*  
Ta = 25°C  
mA  
mA  
IFRM  
Repetitive Peak Forward Current*  
tp 1s  
δ ≤ 0.5  
IFSM  
Ptot  
Surge non Repetitive Forward Current*  
Power Dissipation*  
750  
100  
mA  
tp 10ms  
Ta = 95°C  
mW  
Tstg  
Tj  
°C  
°C  
Storage and Junction Temperature Range  
- 65 to +150  
- 65 to +125  
TL  
Maximum Lead Temperature for Soldering during 10s at 4mm  
from Case  
230  
°C  
THERMAL RESISTANCE  
Symbol  
Test Conditions  
Value  
Unit  
Rth(j-a)  
Junction-ambient*  
300  
°C/W  
ELECTRICAL CHARACTERISTICS  
STATIC CHARACTERISTICS  
Symbol  
VBR  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
100  
Tj = 25°C  
Tj = 25°C  
Tj = 25°C  
Tj = 25°C  
Tj = 100°C  
IR = 100µA  
IF = 1mA  
VF * *  
0.4  
0.45  
1
V
IF = 200mA  
IR * *  
VR = 50V  
0.1  
20  
µA  
DYNAMIC CHARACTERISTICS  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
C
Tj = 25°C  
VR = 1V  
f = 1MHz  
2
pF  
* On infinite heatsink with 4mm lead length  
* * Pulse test: tp 300µs δ < 2%.  
October 2001 - Ed: 1B  
1/4  

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