BAT42

更新时间： 2024-01-18 23:16:20

品牌	Logo	应用领域
固锝 - GOOD-ARK		整流二极管信号二极管
页数	文件大小	规格书
1页	52K
描述
Small-Signal Diode

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中文翻译

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技术参数
数据手册

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BAT42 技术参数

类别：	二极管	配置：	Single
VRRM (V) max：	30	IF (A) max：	0.1
VF (V) max：	1	Condition1_IF (A)：	0.2
IFSM (A) max：	4	IR (uA) max：	0.5
Condition2_VR (V)：	25	trr (ns) max：	5
AEC Qualified：	No	最高工作温度：	125
最低工作温度：	-55	MSL等级：	1
生命周期：	Active	是否无铅：	Yes
符合Reach：	Yes	符合RoHS：	Yes
ECCN代码：	EAR99	Package Outlines：	SOD-523

BAT42 数据手册

BAT42 and BAT43

Small-Signal Diode

Schottky Diodes

Features

ꢀ For general purpose applications.

ꢀ These diodes feature very low turn-on voltage and fast

switching. These devices are protected by a PN junction guard

ring against excessive voltage, such as electrostatic dis-

charges

ꢀ This diode is also available in the MiniMELF case with type

designation LL42 to LL43.

Mechanical Data

ꢀ Case: DO-35 Glass Case

ꢀ Weight: approx. 0.13g

Maximum Ratings and Thermal Characteristics

(Ratings at 25^oC ambient temperature unless otherwise specified.)

Parameter

Symbol

Value

Unit

Repetitive peak reverse voltage

V_RRM

I_F

Volts

Forward continuous current at T_amb=25^oC

200 ⁽¹⁾

Repetitive peak forward Current

I_FRM

500 ⁽¹⁾

at tp<1s, δ<0.5, T_amb=25^oC

Surge forward current at t_p<10ms, T_amb=25^oC

Power dissipation ⁽¹⁾at T_amb=65^oC

Thermal resistance junction to ambient air

Junction temperature

I_FSM

P_tot

4 ⁽¹⁾

200 ⁽¹⁾

Amps

^oC/W

^oC

R_θJA

300 ⁽¹⁾

125

Ambient operating temperature range

Storage temperature range

T_amb

T_S

-65 to +125

-65 to +150

^oC

Electrical Characteristics

(T_J=25^oC unless otherwise noted.)

Parameter

Symbol

V_(BR)R

I_R

Test Condition

Min.

Typ.

Max.

Unit

Reverse breakdown voltage

I_R=100uA (pulsed)

Volts

Leakage current

pulse test t_p<300us, δ<2%

V_R=25V

0.5

100

V_R=25V, T=100^OC

BAT42, 43

BAT42

BAT43

I_F=200mA

I_F=10mA

I_F=50mA

I_F=2mA

1.0

0.40

0.65

0.33

0.45

Forward voltage

pulse test t_p<300us, δ<2%

V_F

0.26

Volt

BAT43

I_F=15mA

Capacitance

C_tot

t_rr

V_R=1V, f=1MHz

I_F=10mA, I_R=10mA,

Reverse recovery time

Detection efficiency

I =1mA, R_L=100Ω

R_L=15KΩ, C_L=300pF

f=45MHz, V_RF=2V

η_ν

Notes:

1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.

680

中文翻译

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