BAT41
Small-Signal Diode
Schottky Diode
Features
ꢀ For general purpose applications.
ꢀ This diode features low turn-on voltage and high breakdown
voltage. This device is protected by a PN junction guard ring
against excessive voltage, such as electrostatic discharges
ꢀ This diode is also available in the MiniMELF case with type
designation LL41.
Mechanical Data
ꢀ Case: DO-35 Glass Case
ꢀ Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
IF
100
Volts
mA
Forward continuous current at Tamb=25oC
100 (1)
Repetitive peak forward current
IFRM
350 (1)
mA
at tp<1s, @<0.5, Tamb=25oC
Surge forward current at tp=10ms, Tamb=25oC
Power dissipation at Tamb=25oC
Thermal resistance junction to ambient air
Junction temperature
IFSM
Ptot
750 (1)
400 (1)
mA
mW
oC/W
oC
RθJA
300 (1)
T
125
j
Ambient operating temperature range
Storage temperature range
Tamb
TS
-65 to +125
-65 to +150
oC
oC
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter
Symbol
V(BR)R
IR
Test Condition
Min.
Typ.
Max.
Unit
Reverse breakdown voltage (2)
Leakage current (2)
IR=100uA
100
110
-
Volts
VR=50V, T=25OC
-
-
-
-
100
20
nA
uA
j
VR=50V, T=100OC
j
IF=1mA
IF=200mA
-
-
0.40
-
0.45
1.0
Forward voltage (2)
Capacitance
VF
Ctot
trr
Volt
pF
VR=1V, f=1MHz
-
-
2
5
-
-
IF=10mA, IR=10mA,
I =1mA, RL=100Ω
ns
Reverse recovery time
rr
Notes:
1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
2. Pulse test, tp=300uS
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