BAT41CWFILM

更新时间： 2024-11-25 03:16:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		小信号肖特基二极管
页数	文件大小	规格书
2页	128K
描述
Low capacitance small signal Schottky diodes

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BAT41CWFILM 数据手册

BAT41

Small-Signal Diode

Schottky Diode

Features

ꢀ For general purpose applications.

ꢀ This diode features low turn-on voltage and high breakdown

voltage. This device is protected by a PN junction guard ring

against excessive voltage, such as electrostatic discharges

ꢀ This diode is also available in the MiniMELF case with type

designation LL41.

Mechanical Data

ꢀ Case: DO-35 Glass Case

ꢀ Weight: approx. 0.13g

Maximum Ratings and Thermal Characteristics

(Ratings at 25^oC ambient temperature unless otherwise specified.)

Parameter

Symbol

Value

Unit

Repetitive peak reverse voltage

V_RRM

I_F

100

Volts

Forward continuous current at T_amb=25^oC

100 ⁽¹⁾

Repetitive peak forward current

I_FRM

350 ⁽¹⁾

at tp<1s, @<0.5, T_amb=25^oC

Surge forward current at t_p=10ms, T_amb=25^oC

Power dissipation at T_amb=25^oC

Thermal resistance junction to ambient air

Junction temperature

I_FSM

P_tot

750 ⁽¹⁾

400 ⁽¹⁾

^oC/W

^oC

R_θJA

300 ⁽¹⁾

125

Ambient operating temperature range

Storage temperature range

T_amb

T_S

-65 to +125

-65 to +150

^oC

Electrical Characteristics

(T_J=25^oC unless otherwise noted.)

Parameter

Symbol

V_(BR)R

I_R

Test Condition

Min.

Typ.

Max.

Unit

Reverse breakdown voltage ⁽²⁾

Leakage current ⁽²⁾

I_R=100uA

100

110

Volts

V_R=50V, T=25^OC

100

V_R=50V, T=100^OC

I_F=1mA

I_F=200mA

0.40

0.45

1.0

Forward voltage ⁽²⁾

Capacitance

V_F

C_tot

t_rr

Volt

V_R=1V, f=1MHz

I_F=10mA, I_R=10mA,

I =1mA, R_L=100Ω

Reverse recovery time

Notes:

1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature

2. Pulse test, t_p=300uS

678

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