Datasheet > BAS70T_08

BAS70T_08

更新时间： 2024-01-12 04:33:23

品牌	Logo	应用领域
美台 - DIODES		肖特基二极管
页数	文件大小	规格书
3页	119K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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BAS70T_08 数据手册

BAS70T /-04T /-05T /-06T

SURFACE MOUNT SCHOTTKY BARRIER DIODE

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Features

Mechanical Data

•

Low Turn-on Voltage

Fast Switching

PN Junction Guard Ring for Transient and ESD Protection

Ultra-Small Surface Mount Package

Lead Free/RoHS Compliant (Note 3)

"Green" Device (Note 4 and 5)

•

Case: SOT-523

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish - Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

•

Polarity: See Diagrams Below

Marking Information: See Page 2

Ordering Information, See Page 2

Weight: 0.002 grams (approximate)

Top View

BAS70T

BAS70-04T

BAS70-05T

BAS70-06T

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Symbol

V_RRM

V_RWM

V_R

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

Forward Continuous Current

(Note 1)

I_FM

100

Non-Repetitive Peak Forward Surge Current

@ t_p< 1.0s

I_FSM

Thermal Characteristics

Characteristic

Power Dissipation

Symbol

P_D

Value

150

Unit

(Note 1)

Thermal Resistance Junction to Ambient Air

833

°C/W

R_θ

Operating Temperature Range

Storage Temperature Range

-55 to +125

-65 to +150

°C

T_J

T_STG

Electrical Characteristics @T = 25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Symbol

V_(BR)R

Min

Max

—

Unit

—

Test Condition

I_R= 10μA

t_p<300µs, I_F= 1.0mA

t_p<300µs, I_F= 15mA

t_p< 300µs, V_R= 50V

(Note 2)

410

1000

Forward Voltage

—

V_F

Leakage Current

Total Capacitance

100

2.0

I_R

C_T

⎯

V_R= 0V, f = 1.0MHz

I_F= I_R= 10mA to IR = 1.0mA,

I_rr= 0.1 x I_R, R_L= 100Ω

Reverse Recovery Time

—

5.0

t_rr

Notes:

1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at

http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

1 of 3

www.diodes.com

July 2008

BAS70T /-04T /-05T /-06T

Document number: DS30261 Rev. 11 - 2

12 3

中文翻译

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与BAS70T_08相关器件

型号	品牌	获取价格	描述	数据表
BAS70T_1	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70T-04	KEXIN	获取价格	Schottky Diodes
BAS70T-04-13	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon
BAS70T-04T	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70T-04T-13	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PAC
BAS70T-05	KEXIN	获取价格	Schottky Diodes
BAS70T-05-13	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon
BAS70T-05T	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70T-05T-13	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PAC
BAS70T-05T-7	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PAC

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