Datasheet > BAS70T-04-13

BAS70T-04-13

更新时间： 2024-01-24 15:25:01

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
2页	63K
描述
Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon

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BAS70T-04-13 数据手册

BAS70T/ -04/ -05/ -06

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Low Turn-on Voltage

SOT-523

Fast Switching

TOP VIEW

Dim Min Max Typ

PN Junction Guard Ring for Transient and

ESD Protection

0.15 0.30 0.22

0.75 0.85 0.80

1.45 1.75 1.60

Ultra-Small Surface Mount Package

Mechanical Data

0.50

0.90 1.10 1.00

1.50 1.70 1.60

0.00 0.10 0.05

0.60 0.80 0.75

0.10 0.30 0.22

0.10 0.20 0.12

0.45 0.65 0.50

Case: SOT-523, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: See Diagram

Marking: See Diagram

Weight: 0.002 grams (approx.)

Ordering Information, see Sheet 2

All Dimensions in mm

BAS70T-06 Marking: 7F

BAS70T-04 Marking: 7D

BAS70T-05 Marking: 7E

BAS70T Marking: 7C

Maximum Ratings and Electrical Characteristics, Single Diode^{@ T = 25°C unless otherwise specified}

Characteristic

Symbol

BAS70T

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_F

I_FSM

P_d

RMS Reverse Voltage

°C/W

°C

Forward Continuous Current

Non-Repetitive Peak Forward Surge Current @ t_p< 1.0s

Power Dissipation (Note 1)

100

150

R_qJA

T_j

Thermal Resistance Junction to Ambient Air (Note 1)

Operating Junction Temperature Range

Storage Temperature Range

833

-55 to +125

-65 to +150

T_STG

°C

@ T_A= 25°C unless otherwise specified

Electrical Ratings

Characteristic

Symbol

Min

Max

Unit

Test Condition

V_(BR)R

Reverse Breakdown Voltage (Note 2)

Forward Voltage (Note 2)

—

I_R= 10mA

t_p<300µs, I_F= 1.0mA

t_p<300µs, I_F= 15mA

410

1000

V_FM

I_RM

C_j

t_p< 300µs, V_R= 50V

V_R= 0V, f = 1.0MHz

Leakage Current (Note 2)

Junction Capacitance

100

2.0

I_F= I_R= 10mA to I_R= 1.0mA,

Irr = 0.1 x I_R, R_L= 100W

t_rr

Reverse Recovery Time

—

5.0

Notes:

1. Device mounted on FR-4 PC board with recommended pad layout.

2. Short duration test pulse used to minimize self-heating effect.

DS30261 Rev. B-2

1 of 2

BAS70T/ -04/ -05/ -06

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与BAS70T-04-13相关器件

型号	品牌	获取价格	描述	数据表
BAS70T-04T	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70T-04T-13	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PAC
BAS70T-05	KEXIN	获取价格	Schottky Diodes
BAS70T-05-13	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon
BAS70T-05T	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70T-05T-13	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PAC
BAS70T-05T-7	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PAC
BAS70T-06	KEXIN	获取价格	Schottky Diodes
BAS70T-06-13	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon
BAS70T-06T	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE