5秒后页面跳转
BAS70T-04T-13 PDF预览

BAS70T-04T-13

更新时间: 2024-02-10 05:39:47
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
2页 66K
描述
Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-3

BAS70T-04T-13 技术参数

生命周期:Obsolete包装说明:ULTRA SMALL, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.28配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.07 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.15 W
认证状态:Not Qualified最大重复峰值反向电压:70 V
最大反向恢复时间:0.005 µs表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BAS70T-04T-13 数据手册

 浏览型号BAS70T-04T-13的Datasheet PDF文件第2页 
BAS70T/ -04/ -05/ -06  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
DEVELOPMENT  
UNDER  
Features  
·
·
·
Low Turn-on Voltage  
Fast Switching  
SOT-523  
TOP VIEW  
Dim Min Max Typ  
PN Junction Guard Ring for Transient and  
ESD Protection  
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
·
Ultra-Small Surface Mount Package  
B
C
Mechanical Data  
¾
¾
0.50  
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
·
·
Case: SOT-523, Molded Plastic  
A
G
Terminals: Solderable per MIL-STD-202,  
Method 208  
H
K
L
·
·
·
·
Polarity: See Diagram  
Marking: See Diagram  
K
M
N
M
N
Weight: 0.002 grams (approx.)  
Ordering Information, see Sheet 2  
J
D
L
All Dimensions in mm  
BAS70T-06 Marking: 7F  
BAS70T-04 Marking: 7D  
BAS70T-05 Marking: 7E  
BAS70T Marking: 7C  
Maximum Ratings and Electrical Characteristics, Single Diode@ T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
BAS70T  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
70  
V
VR(RMS)  
IF  
IFSM  
Pd  
RMS Reverse Voltage  
49  
70  
V
mA  
mA  
mW  
°C/W  
°C  
Forward Continuous Current  
Non-Repetitive Peak Forward Surge Current @ tp < 1.0s  
Power Dissipation (Note 1)  
100  
150  
RqJA  
Tj  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating Junction Temperature Range  
Storage Temperature Range  
833  
-55 to +125  
-65 to +150  
TSTG  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Ratings  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
Forward Voltage  
70  
IR = 10mA  
tp <300µs, IF = 1.0mA  
tp <300µs, IF = 15mA  
410  
1000  
VFM  
mV  
IRM  
Cj  
tp < 300µs, VR = 50V  
VR = 0V, f = 1.0MHz  
Peak Reverse Current  
Junction Capacitance  
¾
¾
100  
2.0  
nA  
pF  
IF = IR = 10mA to IR = 1.0mA,  
Irr = 0.1 x IR, RL = 100W  
trr  
Reverse Recovery Time  
5.0  
ns  
Notes:  
1. Device mounted on FR-4 PC board with recommended pad layout, minimum.  
2. Test period <3000ms.  
DS30261 Rev. A-1  
1 of 2  
BAS70T/ -04/ -05/ -06  

与BAS70T-04T-13相关器件

型号 品牌 获取价格 描述 数据表
BAS70T-05 KEXIN

获取价格

Schottky Diodes
BAS70T-05-13 DIODES

获取价格

Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon
BAS70T-05T DIODES

获取价格

SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70T-05T-13 DIODES

获取价格

Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PAC
BAS70T-05T-7 DIODES

获取价格

Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PAC
BAS70T-06 KEXIN

获取价格

Schottky Diodes
BAS70T-06-13 DIODES

获取价格

Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon
BAS70T-06T DIODES

获取价格

SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70T-06T-13 DIODES

获取价格

Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PAC
BAS70-T1 NXP

获取价格

SURFACE MOUNT SCHOTTKY BARRIER DIODE