Datasheet > BAS70T-05T

BAS70T-05T

更新时间： 2024-02-13 05:42:40

品牌	Logo	应用领域
美台 - DIODES		肖特基二极管
页数	文件大小	规格书
2页	51K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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BAS70T-05T 数据手册

BAS70T/ -04T/ -05T/ -06T

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Low Turn-on Voltage

Fast Switching

PN Junction Guard Ring for Transient and

ESD Protection

SOT-523

Dim Min Max Typ

0.15 0.30 0.22

0.75 0.85 0.80

1.45 1.75 1.60

Ultra-Small Surface Mount Package

TOP VIEW

Mechanical Data

0.50

Case: SOT-523, Molded Plastic

Case material - UL Flammability Rating 94V-0

Moisture sensitivity: Level 1 per J-STD-020A

Terminals: Solderable per MIL-STD-202,

Method 208

0.90 1.10 1.00

1.50 1.70 1.60

0.00 0.10 0.05

0.60 0.80 0.75

0.10 0.30 0.22

0.10 0.20 0.12

0.45 0.65 0.50

Polarity: See Diagrams Below

Marking: See Diagrams Below & Page 2

Weight: 0.002 grams (approx.)

Ordering Information, see Page 2

0°

8°

All Dimensions in mm

BAS70-06T Marking: 7F

BAS70-04T Marking: 7D

BAS70-05T Marking: 7E

BAS70T Marking: 7C

_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics, Single Diode ^{@ T}

Characteristic

Symbol

Value

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_FM

RMS Reverse Voltage

Forward Continuous Current (Note 1)

Non-Repetitive Peak Forward Surge Current @ t_p< 1.0s

Power Dissipation (Note 1)

I_FSM

P_d

100

150

833

°C/W

R_qJA

T_j

Thermal Resistance Junction to Ambient Air (Note 1)

Operating Temperature Range

-55 to +125

-65 to +150

°C

T_STG

Storage Temperature Range

@ T_A= 25°C unless otherwise specified

Electrical Ratings

Characteristic

Symbol

Min

Max

Unit

Test Condition

V_(BR)R

Reverse Breakdown Voltage (Note 2)

I_R= 10mA

—

t_p<300µs, I_F= 1.0mA

t_p<300µs, I_F= 15mA

410

1000

V_F

Forward Voltage (Note 2)

—

I_R

t_p< 300µs, V_R= 50V

V_R= 0V, f = 1.0MHz

Leakage Current (Note 2)

Total Capacitance

100

2.0

C_T

I_F= I_R= 10mA to I_R= 1.0mA,

Irr = 0.1 x I_R, R_L= 100W

t_rr

Reverse Recovery Time

—

5.0

Notes:

1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at

http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

DS30261 Rev. 4 - 2

1 of 2

BAS70T/ -04T/ -05T/ -06T

中文翻译

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与BAS70T-05T相关器件

型号	品牌	获取价格	描述	数据表
BAS70T-05T-13	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PAC
BAS70T-05T-7	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PAC
BAS70T-06	KEXIN	获取价格	Schottky Diodes
BAS70T-06-13	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon
BAS70T-06T	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70T-06T-13	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PAC
BAS70-T1	NXP	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70-T1	INFINEON	获取价格	HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose d
BAS70-T1 (ES)	INFINEON	获取价格	适用于高速开关的通用二级管 ?
BAS70-T1 (P)	INFINEON	获取价格	适用于高速开关的通用二级管

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