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BAS70-05T PDF预览

BAS70-05T

更新时间: 2024-11-27 08:48:31
品牌 Logo 应用领域
金誉半导体 - HTSEMI 肖特基二极管光电二极管
页数 文件大小 规格书
2页 291K
描述
SCHOTTKY DIODE

BAS70-05T 数据手册

 浏览型号BAS70-05T的Datasheet PDF文件第2页 
BAS70T/-04T/-05T/-06T  
SCHOTTKY DIODE  
SOT-523  
FEATURES  
z
Low Turn-on voltage  
Fast switching  
z
BAS70T Marking: 7C  
BAS70-04T Marking: 7D  
BAS70-05T Marking: 7E  
BAS70-06T Marking: 7F  
Maximum Ratings @TA=25  
Parameter  
Symbol  
Limits  
Unit  
Peak Repetitive Peak reverse voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
70  
V
70  
Forward Continuous Current  
IFM  
IFSM  
PD  
mA  
A
100  
150  
833  
Non-Repetitive Peak Forward Surge Current @ t = 1.0s  
Power Dissipation  
mW  
/W  
RθJA  
TSTG  
Thermal Resistance Junction to Ambient Air  
Storage temperature  
-65-125  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR) R  
IR  
Test  
conditions  
MIN  
MAX  
UNIT  
V
Reverse breakdown voltage  
IR= 10µA  
VR=50V  
70  
Reverse voltage  
leakage current  
100  
nA  
mV  
pF  
IF=1mA  
IF=15mA  
410  
1000  
Forward  
Diode  
voltage  
capacitance  
VF  
CD  
VR=0, f=1MHz  
2
IF=IR=10mA,Irr=0.1xIR,  
Reveres recovery time  
trr  
5
nS  
RL=100Ω  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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