BAS70-05TA

更新时间： 2024-02-27 07:50:07

品牌	Logo	应用领域
美台 - DIODES		肖特基二极管光电二极管
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1页	55K
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数据手册

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BAS70-05TA 数据手册

BAS70/ -04/ -05/ -06

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Low Turn-on Voltage

Fast Switching

PN Junction Guard Ring for Transient and

ESD Protection

SOT-23

Dim

Min

0.37

1.19

2.10

0.89

0.45

1.78

2.65

0.013

0.89

0.45

0.076

Max

0.51

1.40

2.50

1.05

0.61

2.05

3.05

0.15

1.10

0.61

0.178

TOP VIEW

Mechanical Data

Case: SOT-23, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: See Diagrams

Approx. Weight: 0.008 grams

All Dimensions in mm

BAS70-06 Marking: K76, K7F

BAS70-04 Marking: K74, K7D

BAS70-05 Marking: K75, K7E

BAS70 Marking: K73, K7C

Maximum Ratings and Electrical Characteristics, Single Diode ^{@ T = 25°C unless otherwise specified}

Characteristic

Symbol

BAS70

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_F

RMS Reverse Voltage

Forward Continuous Current (Note 1)

Non-Repetitive Peak Forward Surge Current @ t_p< 1.0s

Power Dissipation (Note 1)

K/W

°C

I_FSM

P_d

100

200

R_qJA

T_j

Thermal Resistance Junction to Ambient Air (Note 1)

Operating Junction Temperature Range

Storage Temperature Range

625

-55 to +125

-65 to +150

T_STG

°C

@ T_A= 25°C unless otherwise specified

Electrical Ratings

Characteristic

Symbol

V_(BR)R

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 2)

t_p<300µs, I_F= 1.0mA

t_p<300µs, I_F= 15mA

410

1000

V_F

Forward Voltage

—

I_RM

C_j

t_p< 300µs, V_R= 50V

V_R= 0V, f = 1.0MHz

Peak Reverse Current

Junction Capacitance

100

2.0

I_F= I_R= 10mA to I_R= 1.0mA,

R_L=100W

t_rr

Reverse Recovery Time

—

5.0

Notes:

1. Valid Provided that terminals are kept at ambient temperature.

2. Test period <3000ms.

DS11007 Rev. L-2

1 of 1

BAS70/-04/-05/-06

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