BAS70-05T-7-F

更新时间： 2024-02-13 23:25:31

品牌	Logo	应用领域
美台 - DIODES		肖特基二极管
页数	文件大小	规格书
3页	355K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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数据手册

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BAS70-05T-7-F 数据手册

SPICE MODELS: BAS70T BAS70-04T BAS70-05T BAS70-06T

BAS70T/ -04T/ -05T/ -06T

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Lead-free

Features

Low Turn-on Voltage

SOT-523

Fast Switching

Dim Min Max Typ

PN Junction Guard Ring for Transient and

ESD Protection

0.15 0.30 0.22

0.75 0.85 0.80

1.45 1.75 1.60

Ultra-Small Surface Mount Package

Lead Free/RoHS Compliant (Note 3)

0.50

Mechanical Data

0.90 1.10 1.00

1.50 1.70 1.60

0.00 0.10 0.05

0.60 0.80 0.75

0.10 0.30 0.22

0.10 0.20 0.12

0.45 0.65 0.50

Case: SOT-523

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture sensitivity: Level 1 per J-STD-020C

Terminals: Finish - Solderable per MIL-STD-202,

Method 208

Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

0°

8°

Polarity: See Diagrams Below

All Dimensions in mm

Marking: See Diagrams Below & Page 2

Ordering Information, See Page 2

Weight: 0.002 grams (approximate)

BAS70-06T Marking: 7F

@ T_A= 25°C unless otherwise specified

BAS70-04T Marking: 7D

BAS70-05T Marking: 7E

BAS70T Marking: 7C

Maximum Ratings and Electrical Characteristics, Single Diode

Characteristic

Symbol

Value

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_FM

RMS Reverse Voltage

°C/W

°C

Forward Continuous Current (Note 1)

Non-Repetitive Peak Forward Surge Current @ t_p< 1.0s

Power Dissipation (Note 1)

I_FSM

P_d

100

150

qJA

Thermal Resistance Junction to Ambient Air (Note 1)

Operating Temperature Range

833

T_j

-55 to +125

-65 to +150

T_STG

Storage Temperature Range

°C

@ T_A= 25°C unless otherwise specified

Electrical Ratings

Characteristic

Symbol

V_(BR)R

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 2)

I_R= 10mA

—

t_p<300µs, I_F= 1.0mA

t_p<300µs, I_F= 15mA

410

1000

V_F

Forward Voltage

—

I_R

t_p< 300µs, V_R= 50V

V_R= 0V, f = 1.0MHz

Leakage Current (Note 2)

Total Capacitance

100

2.0

C_T

I_F= I_R= 10mA to I_R= 1.0mA,

Irr = 0.1 x I_R, R_L= 100W

t_rr

Reverse Recovery Time

—

5.0

Notes:

1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

3. No purposefully added lead.

DS30261 Rev. 9 - 2

1 of 3

BAS70T/ -04T/ -05T/ -06T

www.diodes.com

ã Diodes Incorporated

12 3

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