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BAS70-05W PDF预览

BAS70-05W

更新时间: 2024-11-26 22:50:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管小信号肖特基二极管开关光电二极管
页数 文件大小 规格书
5页 53K
描述
SMALL SIGNAL SCHOTTKY DIODE

BAS70-05W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:PLASTIC, SMD, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.54Is Samacsys:N
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.41 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
最大非重复峰值正向电流:0.1 A元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.07 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.23 W
认证状态:Not Qualified最大重复峰值反向电压:70 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAS70-05W 数据手册

 浏览型号BAS70-05W的Datasheet PDF文件第2页浏览型号BAS70-05W的Datasheet PDF文件第3页浏览型号BAS70-05W的Datasheet PDF文件第4页浏览型号BAS70-05W的Datasheet PDF文件第5页 
BAS70J / BAS70W  
BAS70-04W /BAS70-05W / BAS70-06W  
SMALL SIGNAL SCHOTTKY DIODE  
FEATURES AND BENEFITS  
K2  
NC  
n
n
n
n
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLE SWITCHING LOSSES  
LOW FORWARD VOLTAGE DROP  
SURFACE MOUNT DEVICE  
K
A
K
A
K2  
NC  
K1  
A
A
K1  
BAS70W  
BAS70-06W  
A2  
K2  
DESCRIPTION  
A2  
K1  
K
A2  
K1  
K
Schottky barrier diodes encapsulated either in  
SOT-323 or SOD-323 small SMD packages.  
A2  
A1  
K2  
A1  
A1  
Single and double diodes with different pining are  
available.  
A1  
BAS70-04W  
BAS70-05W  
SOT-323  
76  
A
K
BAS70J  
SOD-323  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
V
VRRM Repetitive peak reverse voltage  
70  
70  
1
IF  
Continuous forward current  
mA  
A
IFSM  
Ptot  
Surge non repetitive forward current  
tp = 10 ms  
SOD-323  
SOT-323  
Power dissipation (note 1)  
Tamb = 25°C  
230  
mW  
Tstg  
Tj  
Maximum storage temperature range  
- 65 to +150  
150  
°C  
°C  
°C  
Maximum operating junction temperature *  
TL  
Maximum temperature for soldering during 10s  
260  
Note 1: for double diodes, Ptot is the total dissipation of both diodes.  
dPtot  
dTj  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
Rth(j a)  
May 2000 - Ed: 4B  
1/5  

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