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BAS40-05 PDF预览

BAS40-05

更新时间： 2024-10-31 22:48:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管光电二极管
页数 文件大小 规格书
2页 125K
描述
SCHOTTKYarray SERIES

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中文翻译

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BAS40-05 数据手册

 浏览型号BAS40-05的Datasheet PDF文件第2页 
BAS40  
and  
8700 E. Thomas Road  
Scottsdale, AZ 85251  
Tel: (480) 941-6300  
Fax: (480) 947-1503  
BAS70  
SCHOTTKYarray™ SERIES  
DESCRIPTION  
Various configurations of Schottky barrier's diodes in SOT-23 packages are  
provided for general-purpose use in high-speed switching, mixers and  
detector applications. They may also be used for signal terminations at the  
board level. This helps maintain signal integrity and counteract the  
transmission-line effects with (PC) board traces by clamping over/and  
undershoot from signal reflections with the schottky-low-threshold voltages.  
This type of termination also does not depend on matching the transmission  
line characteristic impedance, making it particularly useful where line  
impedance is unknown or a variable. This method of termination can  
control distortions of clock, data, address, and control lines as well as  
provides a stabilizing effect on signal jitter. It can also significantly reduce  
power consumption compared to standard resistor- based termination methods.  
FEATURES  
PACKAGING  
·
·
·
Protects from line to VCC and line to ground  
Clamps within one forward diode threshold voltage  
Low forward voltage and reverse recovery  
characteristics  
·
·
·
Tape & Reel EIA Standard 481  
7 inch reel 3,000 pieces  
13 inch reel 10,000 pieces  
·
·
Bidirectional-low-forward available with “-04” suffix (Figure 2)  
SOT-23 Surface Mount packaging for small foot print  
MECHANICAL  
MAXIMUM RATINGS  
·
·
·
·
·
Operating Temperatures: -550C to +1250C  
·
·
·
Molded SOT-23 Surface Mount  
Weight: .008 grams (approximate)  
Body Marked with device number  
Storage Temperature: -550C to +1500C  
Power dissipation at Tamb = 250C is 200 mW  
Forward Continuous Current at Tamb = 250C is 200 mA  
Surge Forward Current At tp < 1 s, Tamb = 250C is 600 mA  
ELECTRICAL CHARACTERISTICS PER DIODE @ 250C Unless otherwise specified  
Leakage Current  
Pulse test  
tp < 300µs @  
Reverse  
Breakdown  
Voltage  
Repetitive  
Peak Reverse  
Voltage  
Reverse  
Recovery  
Time from  
IF = 10 mA  
through  
Thermal  
Capacitance  
At VR = 0V  
F = 1 MHz  
Ctot  
Forward Voltage Pulse Test  
tp < 300µs  
Resistance  
Junction to  
Ambient Air  
Tested with  
10µA Pulse  
at IF = 1 mA  
at IF = 40 mA  
For BAS40  
VR = 30 V  
DEVICE  
TYPE  
DEVICE  
MARKING  
FIGURE  
IR=10mA to  
IR=1mA  
For BAS70  
VRRM  
(VOLTS)  
V
R = 50 V  
V(BR)R  
(VOLTS)  
VF (mV)  
t
rr (ns)  
RthJA (K/W)  
pF  
I
R (nA)  
TYP  
40  
40  
40  
40  
70  
70  
70  
70  
MIN  
40  
40  
40  
40  
70  
70  
70  
70  
TYP  
20  
20  
20  
20  
20  
20  
20  
20  
MAX  
100  
100  
100  
100  
100  
100  
100  
100  
IF=1mA IF=15mA IF=40mA  
MAX  
MAX  
430  
430  
430  
430  
430  
430  
430  
430  
MAX  
BAS40  
43  
44  
45  
46  
73  
74  
75  
76  
1
2
3
4
1
2
3
4
380  
380  
380  
380  
410  
410  
410  
410  
1000  
1000  
1000  
1000  
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
BAS40-04  
BAS40-05  
BAS40-06  
BAS70  
1000  
1000  
1000  
1000  
BAS70-04  
BAS70-05  
BAS70-06  
MSC1380.PDF ISO 9001 CERTIFIED  
REV C 2/02/2000  
12

中文翻译

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BAS40-05 替代型号

型号 品牌 替代类型 描述 数据表
BAS40-05-TP MCC

功能相似

 Surface Mount Schottky Barrier Diode 200 mWatt
BAS70 DIOTEC

功能相似

 Surface mount Schottky-Barrier Single-/ Double-Diodes
BAS40 DIOTEC

功能相似

 Surface mount Schottky-Barrier Single-/ Double-Diodes

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 		DIODE ARRAY SCHOTTKY 40V TO236AB
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BAS40-05/E8 VISHAY

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BAS40-05/E9 VISHAY

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 		Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, TO-236AB
BAS40-05/T3 NXP

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 		0.12A, 40V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3
BAS40-05/T4 NXP

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 		0.12A, 40V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3

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