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BAS21GS08 PDF预览

BAS21GS08

更新时间: 2024-10-01 14:47:59
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
3页 68K
描述
SIGNAL DIODE, PLASTIC, SOT-23, 3 PIN

BAS21GS08 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknown风险等级:5.04
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

BAS21GS08 数据手册

 浏览型号BAS21GS08的Datasheet PDF文件第2页浏览型号BAS21GS08的Datasheet PDF文件第3页 
BAS19–BAS21  
Vishay Telefunken  
Switching Diodes  
Features  
Silicon planar epitaxial high speed diode  
For switching and general purpose applications  
94 8550  
Order Instruction  
Type  
Type Differentiation  
Ordering Code  
BAS19–GS08  
BAS20–GS08  
BAS21–GS08  
Remarks  
BAS19  
BAS20  
BAS21  
V
RRM  
V
RRM  
V
RRM  
= 120 V  
= 200 V  
= 250 V  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol  
Value  
100  
150  
200  
120  
200  
250  
2.5  
Unit  
V
BAS19  
BAS20  
BAS21  
BAS19  
BAS20  
BAS21  
Working peak reverse voltage=  
DC Blocking voltage  
V
RWM  
=
V
R
Repetitive peak reverse voltage  
Peak forward surge current  
V
RRM  
V
A
t=1 s  
t=1s  
I
FSM  
0.5  
Repetitive peak forward current  
Average forward current  
Forward current  
I
625  
200  
400  
250  
mA  
mA  
mA  
mW  
FRM  
t <0.3ms  
I
FAV  
p
I
F
T
=T  
Case L  
(8 mm from Case)= T  
Power dissipation  
P
tot  
amb  
Junction and storage  
temperature range  
T =T  
–55...+150  
C
j
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction to ambient  
Test Conditions  
Symbol  
R
thJA  
Value  
500  
Unit  
K/W  
www.vishay.com  
1 (3)  
Document Number 85540  
Rev. 2, 13-Feb-01  

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