Datasheet > BAS21H

BAS21H

更新时间： 2024-10-01 06:41:27

品牌	Logo	应用领域
SECOS		二极管开关
页数	文件大小	规格书
2页	136K
描述
Surface Mount Switching Diode

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BAS21H 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

BAS21H 数据手册

BAS21H

Surface Mount Switching Diode

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOD-323

FEATURES

Fast Switching Speed

Surface Mount Package Ideally Suited for automatic Insertion

For General Purpose Switching Applications

Cathode Band

MARKING: T3

Millimeter

Min. Max.

1.05 REF.

0.20 REF.

Millimeter

REF.

Min.

0.080

1.15

1.60

2.30

Max.

0.180

1.45

1.80

2.70

0.80

1.00

0.25

0.40

ABSOLUTE MAXIMUM RATINGS ^{(Single diode @ T}_A^{= 25°C)}

Parameter

Symbol

Ratings

250

Unit

Continuous Reverse Voltage

V_R

I_F

Peak Forward Current

200

Peak Forward Surge Current

I_FM(Surge)

625

THERMAL CHARACTERISTICS

Parameter

Symbol

P_D

Maximum Ratings

Unit

Total Device Dissipation FR–5 Board⁽¹⁾

225

1.8

T_A= 25°C

mW / °C

Derate above 25°C

Thermal Resistance Junction to Ambient

Total Device DissipationAlumina Substrate,⁽²⁾

T_A= 25°C

RθJA

P_D

556

°C / W

300

2.4

mW / °C

Derate above 25°C

Thermal Resistance Junction to Ambient

R_θJA

417

°C / W

°C

Junction, Storage Temperature

T_J, T_STG

-55 ~ +150

ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)

Parameters

Symbol

Min.

Max.

Unit

Test Conditions

Off Characteristics

1.0

100

V_R= 200 Vdc

V_R= 200 Vdc, T_J= 150°C

Reverse Voltage Leakage Current

Reverse Breakdown Voltage

I_R

μA

V_(BR)

250

Vdc

I_BR= 100 μAdc

V_F1

V_F2

1000

1250

I_F= 100 mA

I_F= 200 mA

Forward Voltage

Diode Capacitance

C_D

t_RR

5.0

V_R= 0, f = 1MHz

Reverse Recovery Time

I_F= I_R= 30 mA, R_L=100Ω

FR - 5 = 1.0 x 0.75 x 0.062 in.

Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

01-Jun-2005 Rev. B

Page 1 of 2

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