BAS16-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Ultra fast switching speed
3
• Surface mount package ideally suited for
automatic insertion
• High conductance
• AEC-Q101 qualified
1
2
16923
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOT-23
Weight: approx. 8.0 mg
Polarity: cathode band
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
Ordering code
Marking
A6
Remarks
Tape and Reel
BAS16-V
BAS16-V-GS18 or BAS16-V_GS08
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
100
Unit
Non repetitive peak reverse
voltage
VRM
V
Repetitive peak reverse voltage
= Working peak reverse voltage
= DC Blocking voltage
V
RRM = VRWM = VR
75
V
tp = 1 s
tp =1 µs
IFSM
IFSM
Peak forward surge current
1
2
A
A
Half wave rectification with
resistive load and f ≥ 50 MHz, on
ceramic substrate
IFAV
Average forward current
150
mA
8 mm x10 mm x 0.7 mm
On ceramic substrate
8 mm x 10 mm x 0.7 mm
IF
Forward current
300
350
mA
On ceramic substrate
8 mm x 10 mm x 0.7 mm
Ptot
Power dissipation
mW
Document Number 85539
Rev. 1.6, 12-Aug-10
www.vishay.com
1
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com