BAS16-V-GS18

更新时间： 2024-02-29 04:44:40

品牌	Logo	应用领域
威世 - VISHAY		信号二极管开关光电二极管
页数	文件大小	规格书
5页	157K
描述
Small Signal Fast Switching Diode

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技术参数
数据手册

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BAS16-V-GS18 技术参数

是否无铅：	不含铅	生命周期：	Obsolete
包装说明：	R-PDSO-G3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.29
Is Samacsys：	N	Base Number Matches：	1

BAS16-V-GS18 数据手册

BAS16-V

Vishay Semiconductors

Small Signal Fast Switching Diode

Features

• Silicon Epitaxial Planar Diode

• Ultra fast switching speed

• Surface mount package ideally suited

for automatic insertion

16923

• High conductance

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Mechanical Data

Case: SOT23 Plastic case

Weight: approx. 8.0 mg

Polarity: cathode band

Packaging Codes/Options:

GS18 / 10 k per 13" reel (8 mm tape), 10 k/box

GS08 / 3 k per 7" reel (8 mm tape), 15 k/box

Parts Table

Part

Ordering code

Marking

Remarks

Tape and Reel

BAS16-V

BAS16-V-GS18 or BAS16-V_GS08 A6

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

100

Unit

Non repetitive peak reverse

voltage

V_RM

Repetitive peak reverse voltage

= Working peak reverse voltage

= DC Blocking voltage

_RRM= V_RWM= V_R

Peak forward surge current

t_p= 1 s

t_p=1 µs

I_FSM

I_FAV

Average forward current

half wave rectification with

resistive load and f ≥ 50 MHz, on

ceramic substrate

150

8 mm x10 mm x 0.7 mm

Forward current

on ceramic substrate

8 mm x 10 mm x 0.7 mm

I_F

300

350

Power dissipation

on ceramic substrate

P_tot

8 mm x 10 mm x 0.7 mm

Document Number 85539

Rev. 1.5, 09-Mar-06

www.vishay.com

12 3 4 5

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