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BAS16

更新时间: 2024-11-18 22:48:11
品牌 Logo 应用领域
美台 - DIODES 二极管开关光电二极管
页数 文件大小 规格书
3页 78K
描述
SURFACE MOUNT SWITCHING DIODE

BAS16 数据手册

 浏览型号BAS16的Datasheet PDF文件第2页浏览型号BAS16的Datasheet PDF文件第3页 
BAS16/MMBD4148/MMBD914  
SURFACE MOUNT SWITCHING DIODE  
Features  
·
·
Fast Switching Speed  
SOT-23  
Surface Mount Package Ideally Suited for  
Automatic Insertion  
Dim  
A
B
C
D
E
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.85  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.80  
8°  
A
·
·
For General Purpose Switching Applications  
High Conductance  
B
C
Mechanical Data  
TOP VIEW  
D
G
E
·
·
Case: SOT-23, Molded Plastic  
G
H
J
Case material - UL Flammability Rating  
Classification 94V-0  
H
K
M
·
·
Moisture sensitivity: Level 1 perJ-STD-020A  
J
K
L
L
Terminals: Solderable per MIL-STD-202,  
Method 208  
D
M
a
·
·
·
Polarity: See Diagram  
Marking: KA6, KA2, K5D (See Page 3)  
Weight: 0.008 grams (approx.)  
All Dimensions in mm  
@ T = 25°C unless otherwise specified  
A
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRM  
Non-Repetitive Peak Reverse Voltage  
100  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
75  
VR(RMS)  
IFM  
RMS Reverse Voltage  
53  
V
Forward Continuous Current (Note 1)  
Average Rectified Output Current (Note 1)  
300  
200  
mA  
mA  
IO  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
@ t = 1.0s  
2.0  
1.0  
IFSM  
A
Pd  
Power Dissipation (Note 1)  
350  
357  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
75  
¾
V
IR = 100mA  
IF = 1.0mA  
IF = 10mA  
IF = 50mA  
IF = 150mA  
0.715  
0.855  
1.0  
VFM  
Forward Voltage (Note 2)  
Leakage Current (Note 2)  
¾
¾
V
1.25  
VR = 75V  
VR = 75V, Tj = 150°C  
VR = 25V, Tj = 150°C  
VR = 20V  
1.0  
50  
30  
25  
mA  
mA  
mA  
nA  
IRM  
VR = 0, f = 1.0MHz  
CT  
trr  
Total Capacitance  
¾
¾
2.0  
4.0  
pF  
ns  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
2
1. Device mounted on glass epoxy PCB 1.6” x 1.6” x0.06”; mounting pad for the cathode lead min. 0.93in.  
Notes:  
2. Short duration test pulse used to minimize self-heating effect.  
DS12003 Rev. 12 - 2  
1 of 3  
BAS16/MMBD4148/MMBD914  

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