Datasheet > BAS16

BAS16

更新时间： 2024-11-18 21:53:27

品牌	Logo	应用领域
美丽微 - FORMOSA		二极管开关光电二极管
页数	文件大小	规格书
2页	75K
描述
Switching Diode - Silicon epitaxial planar type

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中文翻译

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BAS16 数据手册

Switching Diode

Formosa MS

BAS16

Silicon epitaxial planar type

Features

SOT-23

Low power loss, high efficiency

High reliability

High speed ( t_rr< 4 ns )

(B)

(A)

(C)

0.055 (1.40)

0.047 (1.20)

0.028 (0.70)

0.020 (0.50)

0.102 (2.60)

0.094 (2.40)

Mechanical data

R 0.05

(0.002)

Case : Glass, SOT-23

0.045 (1.15)

0.033 (0.85)

Terminals : Solder plated,solderable per MIL-STD-750,

Method 2026

Dimensionsininchesand(millimeters)

Polarity: Indicated bycathode band

Mounting Position : Any

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

Non-Repetitive peak reverse voltage

Reverse voltage

CONDITIONS

Symbol

V_RM

MIN.

TYP.

MAX.

100

UNIT

V_R

Peak forward surge current

Repetitive peak forward voltage

Forward current

2.0

500

300

200

350

125

+125

t_p= 1 us

I_FSM

I_FRM

I_F

Average forward current

Power dissipation

V_R= 0

I_FAV

P_V

Junction temperature

T_j

Storage temperature

-55

T_STG

ELECTRICAL CHARACTERISTICS (AT T_A=25 C unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

V_F

MIN.

0.62

TYP.

MAX.

0.72

1.00

5.0

UNIT

I_F= 5mA

I_F= 10mA

V_R= 75V

Forward voltage

0.86

V_F

Reverse current

I_R

Breakdown current

100

I_R= 100uA , T_P/T = 0.01 T_P= 0.3ms

V_R= 0 , f = 1MHz , V_HF= 50mV

V_HF= 2V , f = 100MHz

V_(BR)

C_D

Diode capacitance

2.0

Rectification efficiency

Reverse recovery time

n_R

I_F=10mA, V_R=6V, I_RR= 0.1 X I_R, R_L=100_OHM

t_rr

中文翻译

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