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BAS16

更新时间： 2024-09-30 06:41:27

品牌	Logo	应用领域
商升特 - SEMTECH		二极管开关光电二极管局域网
页数	文件大小	规格书
2页	177K
描述
SILICON EPITAXIAL PLANAR SWITCHING DIODE

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中文翻译

获取价格

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BAS16 数据手册

BAS16

SILICON EPITAXIAL PLANAR SWITCHING DIODE

Features

• Small package

• Low forward voltage

• Fast reverse recovery time

• Small total capacitance

Marking Code: 5D

SOT-23 Plastic Package

Applications

• Ultra high speed switching application

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

Continuous Reverse Voltage

Continuous Forward Current

Repetitive Peak Forward Current

V_RRM

V_R

I_F

215

500

I_FRM

Non-Repetitive Peak Forward Surge Current

t = 1 µs

t = 1 ms

t = 1 s

0.5

I_FSM

Power Dissipation

P_tot

T_j

250

150

Junction Temperature

Storage Temperature Range

T_s

- 65 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

Forward Voltage

at I_F= 1 mA

at I_F= 10 mA

at I_F= 50 mA

at I_F= 150 mA

V_F

715

855

1.25

Reverse Current

at V_R= 25 V

at V_R= 75 V

at V_R= 25 V, T_J= 150 C

at V_R= 75 V, T_J= 150 C

µA

I_R

Reverse Breakdown Voltage

at I_R= 100 µA

V_(BR)R

C_d

Diode Capacitance

at f = 1 MHz

Reverse Recovery Time

at I_F= I_R= 10 mA, R_L= 50 Ω

t_rr

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 10/10/2008

中文翻译

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