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BAS16

更新时间: 2024-11-19 06:41:27
品牌 Logo 应用领域
SECOS 二极管开关光电二极管
页数 文件大小 规格书
2页 375K
描述
Surface Mount Switching Diode

BAS16 数据手册

 浏览型号BAS16的Datasheet PDF文件第2页 
BAS16  
Surface Mount Switching Diode  
Elektronische Bauelemente  
RoHS Compliant Product  
FEATURES  
A
A suffix of "-C" specifies halogen & lead-free  
L
·
·
Fast Switching Speed  
Surface Mount Package Ideally Suited for  
Automatic Insertion  
3
S
Top View  
B
1
2
·
·
For General Purpose Switching Applications  
High Conductance  
V
G
3
C
3
1
1
CATHODE  
ANODE  
2
H
J
D
K
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
75  
Unit  
Vdc  
Continuous Reverse Voltage  
Peak Forward Current  
Peak Forward Surge Current  
V
R
SOT-23  
Min  
Dim  
A
B
C
D
G
H
J
Max  
I
F
200  
500  
mAdc  
mAdc  
2.800 3.040  
1.200 1.400  
0.890 1.110  
0.370 0.500  
1.780 2.040  
0.013 0.100  
0.085 0.177  
0.450 0.600  
0.890 1.020  
2.100 2.500  
0.450 0.600  
I
FM(surge)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
225  
mW  
D
T
= 25°C  
A
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
JA  
D
K
L
P
(2)  
Alumina Substrate,  
Derate above 25°C  
T = 25°C  
A
2.4  
417  
mW/°C  
°C/W  
°C  
S
V
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
JA  
All Dimension in mm  
T , T  
J stg  
55 to +150  
BAS16 = A6  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
Reverse Voltage Leakage Current  
I
R
µAdc  
(V = 75 Vdc)  
1.0  
50  
30  
R
(V = 75 Vdc, T = 150°C)  
R
R
J
J
(V = 25 Vdc, T = 150°C)  
Reverse Breakdown Voltage  
(I = 100 µAdc)  
V
75  
Vdc  
mV  
(BR)  
BR  
Forward Voltage  
(I = 1.0 mAdc)  
V
F
715  
855  
1000  
1250  
F
(I = 10 mAdc)  
F
(I = 50 mAdc)  
F
(I = 150 mAdc)  
F
Diode Capacitance  
(V = 0, f = 1.0 MHz)  
R
C
2.0  
1.75  
6.0  
45  
pF  
Vdc  
ns  
D
Forward Recovery Voltage  
V
FR  
(I = 10 mAdc, t = 20 ns)  
F
r
Reverse Recovery Time  
(I = I = 10 mAdc, R = 50 )  
t
rr  
F
R
L
Stored Charge  
(I = 10 mAdc to V = 5.0 Vdc, R = 500 )  
Q
pC  
S
F
R
L
1.FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 2  

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