BAS16
Surface Mount Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
FEATURES
A
A suffix of "-C" specifies halogen & lead-free
L
·
·
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
3
S
Top View
B
1
2
·
·
For General Purpose Switching Applications
High Conductance
V
G
3
C
3
1
1
CATHODE
ANODE
2
H
J
D
K
MAXIMUM RATINGS
Rating
Symbol
Value
75
Unit
Vdc
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
V
R
SOT-23
Min
Dim
A
B
C
D
G
H
J
Max
I
F
200
500
mAdc
mAdc
2.800 3.040
1.200 1.400
0.890 1.110
0.370 0.500
1.780 2.040
0.013 0.100
0.085 0.177
0.450 0.600
0.890 1.020
2.100 2.500
0.450 0.600
I
FM(surge)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
(1)
Total Device Dissipation FR–5 Board
P
225
mW
D
T
= 25°C
A
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R
JA
D
K
L
P
(2)
Alumina Substrate,
Derate above 25°C
T = 25°C
A
2.4
417
mW/°C
°C/W
°C
S
V
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
JA
All Dimension in mm
T , T
J stg
–55 to +150
BAS16 = A6
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Reverse Voltage Leakage Current
I
R
µAdc
(V = 75 Vdc)
—
—
—
1.0
50
30
R
(V = 75 Vdc, T = 150°C)
R
R
J
J
(V = 25 Vdc, T = 150°C)
Reverse Breakdown Voltage
(I = 100 µAdc)
V
75
—
Vdc
mV
(BR)
BR
Forward Voltage
(I = 1.0 mAdc)
V
F
—
—
—
—
715
855
1000
1250
F
(I = 10 mAdc)
F
(I = 50 mAdc)
F
(I = 150 mAdc)
F
Diode Capacitance
(V = 0, f = 1.0 MHz)
R
C
—
—
—
—
2.0
1.75
6.0
45
pF
Vdc
ns
D
Forward Recovery Voltage
V
FR
(I = 10 mAdc, t = 20 ns)
F
r
Reverse Recovery Time
(I = I = 10 mAdc, R = 50 Ω)
t
rr
F
R
L
Stored Charge
(I = 10 mAdc to V = 5.0 Vdc, R = 500 Ω)
Q
pC
S
F
R
L
1.FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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