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BAS04W

更新时间: 2024-01-18 08:50:20
品牌 Logo 应用领域
SECOS 二极管
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2页 241K
描述
Surface Mount Schottky Barrier Diodes

BAS04W 数据手册

 浏览型号BAS04W的Datasheet PDF文件第2页 
BAS40/-04W/-05W/-06W  
Surface Mount Schottky Barrier Diodes  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-323  
Min  
FEATURES  
Dim  
A
B
C
D
G
H
J
Max  
A
L
1.800 2.200  
1.150 1.350  
0.800 1.000  
0.300 0.400  
1.200 1.400  
0.000 0.100  
0.100 0.250  
0.350 0.500  
0.590 0.720  
2.000 2.400  
0.280 0.420  
z
z
z
Low Turn-on Voltage  
Low Forward Voltage  
Very Low Capacitance  
Less Than 5.0pF @ 0V  
S
C
Top View  
B
z
For high speed switching application, circuit protection  
V
G
K
L
MECHANICAL DATA  
H
J
D
K
z
Case: SOT-323, Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
S
z
V
3
All Dimension in mm  
z
z
z
Polarity: See Diagrams Below  
Weight: 0.006 grams (approx.)  
Mounting Position: Any  
1
2
3
3
3
3
1
2
2
1
2
1
2
1
BAS40W Marking: 43  
BAS40-04W Marking: 44  
BAS40-05W Marking: 45  
BAS40-06W Marking: 46  
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C  
Parameter  
Symbol  
Ratings  
Unit  
V
Reverse Voltage  
VR  
IF  
40  
Forward Continuous Current  
200  
mA  
mA  
Single Forward Current, t10 ms  
Thermal Resistance (Note 1)  
JunctiontoAmbient (Note 2)  
Forward Power Dissipation  
@ TA = 25°C  
IFSM  
600  
508  
311  
RθJA  
°C/W  
325  
1.8  
mW  
PF  
mW / °C  
Derate above 25°C  
Junction, Storage Temperature  
TJ, TSTG  
-55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)  
Parameters  
Reverse Breakdown Voltage  
Reverse Current  
Symbol  
Min.  
Max.  
Unit  
Test Conditions  
V(BR)R  
40  
-
V
IR = 10 μA  
IR  
VF1  
VF2  
CTOT  
tRR  
-
-
-
-
-
200  
380  
1000  
5.0  
nA  
mV  
mV  
pF  
VR = 30V  
IF = 1mA  
Forward Voltage  
IF = 40mA  
Diode Capacitance  
VR = 0, f=1MHz  
IRR = 1 mA, IR=IF=10mA, RL=100Ω  
Reverse Recovery Time  
5
nS  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
22-Sept-2008 Rev.C  
Page 1 of 2  

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