Datasheet > BAS04

BAS04

更新时间： 2024-01-15 15:36:06

品牌	Logo	应用领域
SECOS		二极管
页数	文件大小	规格书
2页	238K
描述
Surface Mount Schottky Barrier Diodes

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中文翻译

获取价格

数据手册

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BAS04 数据手册

BAS40/-04/-05/-06

Surface Mount Schottky Barrier Diodes

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

SOT-23

Min

Low Turn-on Voltage

Low Forward Voltage

Very Low Capacitance

Less Than 5.0pF @ 0V

For high speed switching application,

circuit protection

Collector

Dim

Max

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

Base

Emitter

MECHANICAL DATA

Case: SOT-23, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Top View

Polarity: See Diagrams Below

Weight: 0.008 grams (approx.)

Mounting Position: Any

All Dimension in mm

BAS40 Marking: 43

BAS40-04 Marking: 44

BAS40-05 Marking: 45

BAS40-06 Marking: 46

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Reverse Voltage

V_R

I_F

Forward Continuous Current

200

Single Forward Current, t≦10 ms

Thermal Resistance (Note 1)

Junction−to−Ambient (Note 2)

Forward Power Dissipation

@ T_A= 25°C

I_FSM

600

508

311

R_θJA

°C/W

325

1.8

P_F

mW / °C

Derate above 25°C

Junction, Storage Temperature

T_J, T_STG

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS ^{(at Ta = 25°C unless otherwise specified)}

Parameters

Reverse Breakdown Voltage

Reverse Current

Symbol

Min.

Max.

Unit

Test Conditions

V_(BR)R

I_R= 10 μA

I_R

V_F1

V_F2

C_TOT

t_RR

200

380

1000

5.0

V_R= 30V

I_F= 1mA

Forward Voltage

I_F= 40mA

Diode Capacitance

V_R= 0, f=1MHz

I_RR= 1 mA, I_R=I_F=10mA, R_L=100Ω

Reverse Recovery Time

http://www.SeCoSGmbH.com

Any changes of specification will not be informed individually.

22-Sept-2008 Rev.C

Page 1 of 2

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