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BAR67-02V-H6327 PDF预览

BAR67-02V-H6327

更新时间: 2024-11-06 03:13:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 885K
描述
Pin Diode, 150V V(BR),

BAR67-02V-H6327 数据手册

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BAR67...  
Silicon PIN Diode  
For low loss RF switches and attenuators  
Very low capacitance at zero volt reverse  
bias at frequencies above 1 GHz (typ. 0.25 pF)  
Low forward resistance (typ. 1.5 @ 5mA)  
Low harmonics  
Pb-free (RoHS compliant) package  
BAR67-02V  
BAR67-04  
3
1
2
D
1
D
2
1
2
Type  
BAR67-02V  
BAR67-04  
Package  
SC79  
SOT23  
Configuration  
single  
series  
L (nH) Marking  
S
0.6  
1.8  
T
PMs  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Diode reverse voltage  
Forward current  
Symbol  
Value  
150  
200  
Unit  
V
mA  
mW  
V
R
I
F
Total power dissipation  
P
tot  
T 118°C, BAR67-02V  
250  
250  
150  
S
T 25°C, BAR67-04  
S
°C  
Junction temperature  
T
j
Operating temperature range  
Storage temperature  
T
T
-55 ... 125  
-55 ... 150  
op  
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
R
thJS  
Value  
Unit  
K/W  
1)  
BAR67-02V  
BAR67-04  
1
115  
290  
For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2011-06-14  
1

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