Datasheet > BA1A3Q

BA1A3Q

更新时间： 2024-11-22 21:55:07

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
4页	105K
描述
COMPOUND TRANSISTOR

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中文翻译

获取价格

数据手册

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BA1A3Q 数据手册

DATA SHEET

COMPOUND TRANSISTOR

BA1A3Q

on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

On-chip bias resistor

(R¹= 1.0 kΩ, R²= 10 kΩ)

•

Complementary transistor with BN1A3Q

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

P^T

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Total power dissipation

Junction temperature

Storage temperature

100

°C

200

250

T^j

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50 %

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= 50 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

h^FE1**

h^FE2**

V^CE(sat)**

V^IL**

V^IH**

R¹

V^CE= 5.0 V, I^C= 5.0 mA

V^CE= 5.0 V, I^C= 50 mA

I^C= 5.0 mA, I^B= 0.25 mA

V^CE= 5.0 V, I^C= 100 µA

V^CE= 0.2 V, I^C= 5.0 mA

230

0.05

0.7

1.0

100

−

DC current gain

Collector saturation voltage

Low level input voltage

High level input voltage

Input resistance

0.2

0.5

2.0

0.7

kΩ

µs

1.3

E-to-B resistance

Turn-on time

R²

V^CC= 5 V, R^L= 1 kΩ

V^I= 5 V, PW = 2 µs

duty cycle≤2 %

t^on

0.2

5.0

6.0

Storage time

t^stg

Turn-off time

t^off

** PW ≤ 350 µs, duty cycle ≤ 2 %

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16173EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4

中文翻译

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与BA1A3Q相关器件

型号	品牌	获取价格	描述	数据表
BA1A3Q(M)	RENESAS	获取价格	BA1A3Q(M)
BA1A3Q-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
BA1A4M	NEC	获取价格	NPN SILICON TRANSISTOR
BA1A4M-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
BA1A4P	NEC	获取价格	NPN SILICON TRANSISTOR
BA1A4P-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
BA1A4Z	RENESAS	获取价格	100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
BA1A4Z	NEC	获取价格	on-chip resistor PNP silicon epitaxial transistor
BA1A4Z-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
BA1A4Z-K	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon