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BA1A4Z-Q PDF预览

BA1A4Z-Q

更新时间: 2024-11-23 21:06:43
品牌 Logo 应用领域
日电电子 - NEC 开关晶体管
页数 文件大小 规格书
4页 98K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

BA1A4Z-Q 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.76
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):135
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):6000 ns
最大开启时间(吨):200 nsBase Number Matches:1

BA1A4Z-Q 数据手册

 浏览型号BA1A4Z-Q的Datasheet PDF文件第2页浏览型号BA1A4Z-Q的Datasheet PDF文件第3页浏览型号BA1A4Z-Q的Datasheet PDF文件第4页 
DATA SHEET  
COMPOUND TRANSISTOR  
BA1A4Z  
on-chip resistor PNP silicon epitaxial transistor  
For mid-speed switching  
FEATURES  
PACKAGE DRAWING (UNIT: mm)  
On-chip bias resistor  
(R1 = 10 k)  
Complementary transistor with BA1A4Z  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse) *  
PT  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (Pulse)  
Total power dissipation  
Junction temperature  
Storage temperature  
60  
50  
5
V
V
100  
mA  
mA  
mW  
°C  
°C  
200  
250  
Tj  
150  
Electrode Connection  
1. Emitte  
Tstg  
55 to +150  
2. Collector  
3. Base  
* PW 10 ms, duty cycle 50 %  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Collector cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 50 V, IE = 0  
MIN.  
TYP.  
MAX.  
100  
Unit  
nA  
hFE1 **  
hFE2 **  
VCE(sat) **  
VIL **  
VIH **  
R1  
VCE = 5.0 V, IC = 5.0 mA  
VCE = 5.0 V, IC = 50 mA  
IC = 5.0 mA, IB = 0.25 mA  
VCE = 0.2 V, IC = 5.0 mA  
VCE = 5.0 V, IC = 100 µA  
135  
100  
340  
300  
0.04  
0.8  
600  
DC current gain  
Collector saturation voltage  
High level input voltage  
Low level input voltage  
Input resistance  
0.2  
V
2.0  
0.7  
V
0.55  
10  
0.5  
13.0  
0.2  
V
kΩ  
µs  
µs  
µs  
Turn-on time  
ton  
VCC = 5.0 V, RL = 1.0 kΩ  
VI = 5.0 V, PW = 2.0 µs  
duty cycle2 %  
Storage time  
tstg  
5.0  
Turn-off time  
toff  
6.0  
** Pulse test PW 350 µs, duty cycle 2 %  
hFE CLASSIFICATION  
Marking  
hFE1  
Q
P
K
135 to 270  
200 to 400  
300 to 600  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D10841EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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