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BA1A3Q-A PDF预览

BA1A3Q-A

更新时间: 2024-11-23 21:08:59
品牌 Logo 应用领域
日电电子 - NEC 开关晶体管
页数 文件大小 规格书
4页 127K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

BA1A3Q-A 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
其他特性:BUILT IN BIAS RESISTOR RATIO 10最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):6000 ns最大开启时间(吨):200 ns
Base Number Matches:1

BA1A3Q-A 数据手册

 浏览型号BA1A3Q-A的Datasheet PDF文件第2页浏览型号BA1A3Q-A的Datasheet PDF文件第3页浏览型号BA1A3Q-A的Datasheet PDF文件第4页 
DATA SHEET  
COMPOUND TRANSISTOR  
BA1A3Q  
on-chip resistor NPN silicon epitaxial transistor  
For mid-speed switching  
FEATURES  
PACKAGE DRAWING (UNIT: mm)  
On-chip bias resistor  
(R1 = 1.0 k, R2 = 10 k)  
Complementary transistor with BN1A3Q  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse) *  
PT  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (Pulse)  
Total power dissipation  
Junction temperature  
Storage temperature  
60  
50  
5
V
V
100  
mA  
mA  
mW  
°C  
°C  
200  
250  
Tj  
150  
55 to +150  
Tstg  
* PW 10 ms, duty cycle 50 %  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Collector cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 50 V, IE = 0  
MIN.  
TYP.  
MAX.  
100  
Unit  
nA  
hFE1 **  
hFE2 **  
VCE(sat) **  
VIL **  
VIH **  
R1  
VCE = 5.0 V, IC = 5.0 mA  
VCE = 5.0 V, IC = 50 mA  
IC = 5.0 mA, IB = 0.25 mA  
VCE = 5.0 V, IC = 100 µA  
VCE = 0.2 V, IC = 5.0 mA  
35  
80  
60  
230  
0.05  
0.7  
1.0  
1.0  
10  
100  
DC current gain  
Collector saturation voltage  
Low level input voltage  
High level input voltage  
Input resistance  
0.2  
0.5  
V
V
2.0  
0.7  
7
V
kΩ  
kΩ  
µs  
µs  
µs  
1.3  
13  
E-to-B resistance  
Turn-on time  
R2  
VCC = 5 V, RL = 1 kΩ  
VI = 5 V, PW = 2 µs  
duty cycle2 %  
ton  
0.2  
5.0  
6.0  
Storage time  
tstg  
Turn-off time  
toff  
** PW 350 µs, duty cycle 2 %  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16173EJ1V0DS00 (1st edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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