DATA SHEET
COMPOUND TRANSISTOR
BA1A4Z
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
PACKAGE DRAWING (UNIT: mm)
•
On-chip bias resistor
(R1 = 10 kΩ)
•
Complementary transistor with BA1A4Z
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse) *
PT
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Total power dissipation
Junction temperature
Storage temperature
60
50
5
V
V
100
mA
mA
mW
°C
°C
200
250
Tj
150
Electrode Connection
1. Emitte
Tstg
−55 to +150
2. Collector
3. Base
* PW ≤ 10 ms, duty cycle ≤ 50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = 50 V, IE = 0
MIN.
TYP.
MAX.
100
Unit
nA
−
hFE1 **
hFE2 **
VCE(sat) **
VIL **
VIH **
R1
VCE = 5.0 V, IC = 5.0 mA
VCE = 5.0 V, IC = 50 mA
IC = 5.0 mA, IB = 0.25 mA
VCE = 0.2 V, IC = 5.0 mA
VCE = 5.0 V, IC = 100 µA
135
100
340
300
0.04
0.8
600
DC current gain
−
Collector saturation voltage
High level input voltage
Low level input voltage
Input resistance
0.2
V
2.0
0.7
V
0.55
10
0.5
13.0
0.2
V
kΩ
µs
µs
µs
Turn-on time
ton
VCC = 5.0 V, RL = 1.0 kΩ
VI = 5.0 V, PW = 2.0 µs
duty cycle≤2 %
Storage time
tstg
5.0
Turn-off time
toff
6.0
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %
hFE CLASSIFICATION
Marking
hFE1
Q
P
K
135 to 270
200 to 400
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10841EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
1998
©