Datasheet > BA1A4Z-A

BA1A4Z-A

更新时间： 2024-11-27 03:47:31

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
4页	98K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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中文翻译

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BA1A4Z-A 数据手册

DATA SHEET

COMPOUND TRANSISTOR

BA1A4Z

on-chip resistor PNP silicon epitaxial transistor

For mid-speed switching

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

On-chip bias resistor

(R¹= 10 kΩ)

•

Complementary transistor with BA1A4Z

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

P^T

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Total power dissipation

Junction temperature

Storage temperature

100

°C

200

250

T^j

150

Electrode Connection

1. Emitte

T^stg

−55 to +150

2. Collector

3. Base

* PW ≤ 10 ms, duty cycle ≤ 50 %

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= 50 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

h^FE1**

h^FE2**

V^CE(sat)**

V^IL**

V^IH**

R¹

V^CE= 5.0 V, I^C= 5.0 mA

V^CE= 5.0 V, I^C= 50 mA

I^C= 5.0 mA, I^B= 0.25 mA

V^CE= 0.2 V, I^C= 5.0 mA

V^CE= 5.0 V, I^C= 100 µA

135

100

340

300

0.04

0.8

600

DC current gain

−

Collector saturation voltage

High level input voltage

Low level input voltage

Input resistance

0.2

2.0

0.7

0.55

0.5

13.0

0.2

kΩ

µs

Turn-on time

t^on

V^CC= 5.0 V, R^L= 1.0 kΩ

V^I= 5.0 V, PW = 2.0 µs

duty cycle≤2 %

Storage time

t^stg

5.0

Turn-off time

t^off

6.0

** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %

h^FECLASSIFICATION

Marking

h^FE1

135 to 270

200 to 400

300 to 600

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D10841EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4

中文翻译

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与BA1A4Z-A相关器件

型号	品牌	获取价格	描述	数据表
BA1A4Z-K	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
BA1A4Z-P	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR
BA1A4Z-Q	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
BA1-B0-10-250-PB1-C	Carling Technologies	获取价格	Magnetic Circuit Breaker,
BA1-B0-10-420-1B1-C	Carling Technologies	获取价格	Magnetic Circuit Breaker,
BA1-B0-10-450-1B1-C	Carling Technologies	获取价格	Magnetic Circuit Breaker,
BA1-B0-10-450-5D1-C	Carling Technologies	获取价格	Magnetic Circuit Breaker,
BA1-B0-10-625-121-C	Carling Technologies	获取价格	Magnetic Circuit Breaker,
BA1-B0-10-625-122-C	Carling Technologies	获取价格	Magnetic Circuit Breaker,
BA1-B0-10-625-425-D	Carling Technologies	获取价格	Magnetic Circuit Breaker,

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