5秒后页面跳转
B4S-E3 PDF预览

B4S-E3

更新时间: 2024-11-12 20:08:11
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 196K
描述
DIODE 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA, LEAD FREE, MINIATURE, PLASTIC, MBS, 4 PIN, Bridge Rectifier Diode

B4S-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-269AA
包装说明:R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.3
其他特性:UL RECOGNIZED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:TO-269AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
最大非重复峰值正向电流:30 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:400 V子类别:Bridge Rectifier Diodes
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

B4S-E3 数据手册

 浏览型号B4S-E3的Datasheet PDF文件第2页浏览型号B4S-E3的Datasheet PDF文件第3页浏览型号B4S-E3的Datasheet PDF文件第4页 
B2S, B4S & B6S  
Vishay General Semiconductor  
New Product  
Miniature Glass Passivated Single-Phase  
Surface Mount Bridge Rectifier  
TO-269AA (MBS)  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
0.5 A  
200 V, 400 V, 600 V  
30 A  
~
~
5 µA  
VF  
1.0 V  
Tj max.  
150 °C  
~
~
Features  
Mechanical Data  
• UL Recognition, file number E54214  
• Saves space on printed circuit boards  
• Ideal for automated placement  
• Middle surge current capability  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Case: TO-269AA (MBS)  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
Polarity: As marked on body  
Typical Applications  
General purpose use in ac-to-dc bridge full wave rec-  
tification for Power Supply, Lighting Ballaster, Battery  
Charger, Home Appliances, Office Equipment, and  
Telecommunication applications  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Device marking code  
Symbol  
B2S  
B2  
B4S  
B4  
B6S  
B6  
Unit  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
200  
400  
600  
V
V
V
A
Maximum RMS voltage  
140  
200  
280  
400  
420  
600  
Maximum DC blocking voltage  
0.5(1)  
Maximum average forward output rectified current on glass-epoxy  
P.C.B. (see Fig. 1)  
IF(AV)  
Peak forward surge current 10 msec single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
I2t  
A2sec  
°C  
Rating for fusing (t < 8.3 ms)  
5.0  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Document Number 88893  
08-Jul-05  
www.vishay.com  
1

与B4S-E3相关器件

型号 品牌 获取价格 描述 数据表
B4S-E3/80 VISHAY

获取价格

DIODE 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA, ROHS COMPLIANT, PLASTIC, MB
B4S-G COMCHIP

获取价格

Silicon General Purpose Bridge Rectifier
B4SGS COMCHIP

获取价格

SMD Genenal Purpose Bridge Rectifier
B4S-HF COMCHIP

获取价格

SMD General Purpose Bridge Rectifier Diode
B4SS LRC

获取价格

High Current Glass Passivated Molding Single-Phase Bridge Rectifier
B4S-T3 WTE

获取价格

0.5A MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
B4TU01 ETC

获取价格

CONTACT BLOCK 1N/C
B4TU11 ETC

获取价格

CONTACT BLOCK 1N/O 1N/C
B4TU20 ETC

获取价格

CONTACT BLOCK 2N/O
B4W TOKO

获取价格

Common-mode Chokes for IEEE1394/LVDS