Datasheet > B4S-T3

B4S-T3

更新时间： 2024-11-11 22:27:11

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
3页	59K
描述
0.5A MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

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中文翻译

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数据手册

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B4S-T3 数据手册

WTE

PO WER SEMICONDUCTORS

B1S – B8S

0.5A MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

Low Forward Voltage Drop

High Current Capability

High Surge Current Capability

Designed for Surface Mount Application

Plastic Material – UL Recognition Flammability

Classification 94V-O

MB-S

Min

4.50

3.80

0.006

—

Dim

Max

4.90

4.20

0.35

0.20

7.0

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Case

Weight: 0.22 grams (approx.)

Mounting Position: Any

—

0.70

1.30

2.30

—

1.10

1.70

2.70

3.00

0.80

Marking: Type Number

0.50

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

B1S

B2S

B4S

B6S

B8S

Unit

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

RMS Reverse Voltage

V^R(RMS)

I^O

280

0.5

Average Rectified Output Current

@T_A= 40°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

FSM

I²t Rating for Fusing (t < 8.35ms)

I²t

A²s

Forward Voltage per element

@I_F= 0.5A

V^FM

I^RM

1.0

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

500

µA

Typical Junction Capacitance (per leg) (Note 1)

Typical Thermal Resistance (per leg) (Note 2)

Operating and Storage Temperature Range

C^j

K/W

°C

R^ꢀ^JA

T^j, T^STG

-55 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to ambient mounted on PC board with 13mm²copper pads.

B1S – B8S

1 of 3

12 3

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