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B4S-E3/80 PDF预览

B4S-E3/80

更新时间: 2024-11-12 19:08:43
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 100K
描述
DIODE 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA, ROHS COMPLIANT, PLASTIC, MBS, 4 PIN, Bridge Rectifier Diode

B4S-E3/80 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-269AA
包装说明:R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.28
其他特性:UL RECOGNIZED最小击穿电压:400 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:TO-269AAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):250认证状态:Not Qualified
最大重复峰值反向电压:400 V子类别:Bridge Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

B4S-E3/80 数据手册

 浏览型号B4S-E3/80的Datasheet PDF文件第2页浏览型号B4S-E3/80的Datasheet PDF文件第3页浏览型号B4S-E3/80的Datasheet PDF文件第4页 
B2S, B4S, B6S  
Vishay General Semiconductor  
www.vishay.com  
Miniature Glass Passivated Single-Phase  
Surface Mount Bridge Rectifier  
FEATURES  
• UL recognition, file number E54214  
~
• Saves space on printed circuit boards  
• Ideal for automated placement  
• Middle surge current capability  
~
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
~
~
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
for power supply, lighting ballaster, battery charger, home  
appliances, office equipment, and telecommunication  
applications.  
TO-269AA (MBS)  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
Case: TO-269AA (MBS)  
Package  
TO-269AA (MBS)  
IF(AV)  
0.5 A  
200 V, 400 V, 600 V  
30 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
VRRM  
IFSM  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
IR  
5 μA  
E3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 0.5 A  
TJ max.  
Diode variations  
1.0 V  
Polarity: As marked on body  
150 °C  
Quad  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
B2S  
B2  
B4S  
B4  
B6S  
B6  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC blocking voltage  
Maximum average forward output rectified current on  
glass-epoxy PCB (fig. 1)  
IF(AV)  
0.5 (1)  
30  
A
A
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
Rating for fusing (t < 8.3 ms)  
I2t  
5.0  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Note  
(1)  
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUES  
UNIT  
Maximum instantaneous forward  
voltage per diode  
IF = 0.5 A  
VF  
1.0  
V
TA = 25 °C  
5.0  
100  
13  
Maximum DC reverse current at rated  
DC blocking voltage per diode  
IR  
μA  
pF  
TA = 125 °C  
Typical junction capacitance per diode 4.0 V, 1 MHz  
CJ  
Revision: 19-Aug-13  
Document Number: 88893  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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