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B4S-G PDF预览

B4S-G

更新时间: 2024-11-12 03:20:43
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
2页 51K
描述
Silicon General Purpose Bridge Rectifier

B4S-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.78其他特性:UL RECOGNIZED
最小击穿电压:400 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PDSO-G4
最大非重复峰值正向电流:30 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:400 V
子类别:Bridge Rectifier Diodes表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED

B4S-G 数据手册

 浏览型号B4S-G的Datasheet PDF文件第2页 
Silicon General Purpose Bridge Rectifier  
B05S-G thru B10S-G  
Glass Passivated Type  
Reverse Voltage: 50 ~ 1000 Volts  
Forward Current: 0.5 Amp  
Features:  
TO-269AA  
Ideal for surface mount applications  
Easy pick and place  
Plastic package has Underwriters Lab.  
-
-
+
-
Flammability classification 94V-0  
.165 (4.2)  
.150 (3.8)  
Built-in strain relief  
.008 (0.2)  
Glass passicated junction  
.275 (7.0)  
MAX.  
.031 (0.8)  
.019 (0.5)  
Mechanical Data:  
Case: JEDEC DO-269AA molded plastic  
Terminals: solderable per MIL-STD-750, Method 2026  
Polarity: Marked on body  
.043 (1.1)  
.027 (0.7)  
.193 (4.9)  
.177 (4.5)  
.106 (2.7)  
.090 (2.3)  
Mounting position: Any  
Approx. Weight: 0.22gram  
.106 (2.7)  
.090 (2.3)  
Dimmension in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Parameter  
Symbol B05S-G B1S-G B2S-G B4S-G B6S-G B8S-G B10S-G  
Unit  
V
Max. Repetitive Peak Reverse Voltage  
Max. DC Blocking Voltage  
Max. RMS Voltage  
V
RRM  
50  
50  
35  
100  
100  
70  
200  
200  
140  
400  
400  
280  
600  
600  
420  
800  
800  
560  
1000  
1000  
700  
V
DC  
V
V
V
RMS  
Peak Surge Forward Current  
8.3ms single half sine-wave  
superimposed on rate load  
(JEDEC method)  
I
30  
A
FSM  
Max. Average Forward Current  
I
0.5  
1.0  
A
V
o
Max. Instantaneous Forward Current  
at 0.5A  
V
F
Max. DC Reverse Current at Rated DC  
Blocking Voltage  
Ta=25ºC  
5
500  
I
R
uA  
Ta=125ºC  
Max. Thermal Resistance (Note 1)  
Operating Junction Temperature  
Storage Temperature  
RθJA  
85  
ºC/W  
ºC  
Tj  
-55 to +150  
-55 to +150  
TSTG  
ºC  
Note1: Thermal resistance from junction to ambient.  
“-G” suffix designated RoHS compliant version  
.
.
.
Page1  
Comhip Technology Corporation Tel:510-657-8671 Fax: 510-657-8921 www.comchiptech.com  

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