Datasheet > B4S

B4S

更新时间： 2024-11-29 06:40:55

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描述
CURRENT 0.8 Amperes VOLTAGE 100 to 1000 Volts

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B4S 数据手册

CURRENT 0.8 Amperes

VOLTAGE 100 to 1000 Volts

B1S THRU B10S

Features

· Glass Passivated Die Construction

· Diffused Junction

· Low Forward Voltage Drop, High Current Capability

· Surge Overload Rating to 30A Peak

· Designed for Printed Circuit Board Applications

· Plastic Material - UL Flammability Classification 94V-0

D E

MiniDIP

Min

Dim

Max

5.75

4.00

0.35

0.20

7.00

1.10

4.90

2.90

2.70

0.80

5.43

Mechanical Data

3.60

0.15

· Case : Molded Plastic

0.05

· Terminals : Solder Plated Leads,

Solderable per MIL-STD-202, Method 2026

· Polarity : As Marked on Case

· Approx. Weight : 0.125 grams

· Mounting Position : Any

0.70

4.50

2.80

2.50

0.50

· Marking : Type Number

All Dimens ions in mm

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive

load. For capacitive load, derate by 20%)

Symbols

Units

B1S

B2S

B4S

B6S

B8S

B10S

Peak Repetitive Reverse voltage

Working Peak Reverse voltage

DC Blocking voltage

RMM

RWM

100

200

140

400

280

600

420

800

560

1000

700

Volts

RMS Reverse voltage

RMS

Volts

Amp

Average Rectified Output Current @ T

A=40

0.8

℃

Non-Repetitive Peak Forward Surge Current,

8.3ms single half-sine-wave superimposed

on rated load (JEDEC method)

IFSM

Amp

1.0

Volts

Forward voltage (per element)

@ IF=0.4 A

@ T

=25℃

Peak Reverse Current at Rated

DC Blocking voltage (per element)

IRM

μA

A=125℃

500

Typical Junction Capacitance

per element (Note 1)

Typical Thermal Resistance,

Junction to Ambient (Note 2)

℃/W

RθJA

STG

Operating and Storage Temperature Range

-55 to +150

℃

Notes:

(1) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.

(2) Thermal Resistance, junction to ambient, measured on PC board with 5.0²mm (0.03mm thick) land areas.

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