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ATP213_12 PDF预览

ATP213_12

更新时间: 2024-11-24 12:50:47
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
7页 451K
描述
General-Purpose Switching Device Applications

ATP213_12 数据手册

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Ordering number : ENA1526A  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
ATP213  
Features  
Low ON-resistance  
Large current  
4V drive  
Slim package  
Halogen free compliance  
Protection diode in  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
60  
±20  
50  
DSS  
V
V
GSS  
I
A
D
Drain Current (PW 10 s)  
I
PW 10 s, duty cycle 1%  
150  
50  
A
μ
μ
DP  
Allowable Power Dissipation  
Channel Temperature  
P
Tc=25 C  
W
°
D
Tch  
150  
C
C
°
°
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
37  
25  
mJ  
A
AS  
I
AV  
Note : 1 V =10V, L=100 H, I =25A  
*
μ
DD  
2 L 100 H, Single pulse  
AV  
*
μ
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: ATPAK  
7057-001  
• JEITA, JEDEC  
: -  
• Minimum Packing Quantity : 3,000 pcs./reel  
ATP213-TL-H  
1.5  
6.5  
Packing Type: TL  
Marking  
4.6  
2.6  
0.4  
0.4  
ATP213  
4
LOT No.  
TL  
Electrical Connection  
2,4  
2
0.55  
1
3
0.8  
0.6  
1 : Gate  
0.4  
2.3  
2.3  
2 : Drain  
3 : Source  
4 : Drain  
1
3
SANYO : ATPAK  
http://semicon.sanyo.com/en/network  
62012 TKIM/80509PA TK IM TC-00002021  
No. A1526-1/7  

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