Datasheet > ATP216-TL-H

ATP216-TL-H

更新时间： 2024-10-02 11:15:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	376K
描述
N-Channel Power MOSFET, 50V, 35A, 23mOhm, Single ATPAK

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技术参数
数据手册

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ATP216-TL-H 技术参数

是否无铅：	不含铅	生命周期：	Lifetime Buy
包装说明：	,	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	1 week	风险等级：	5.32
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	35 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	40 W	子类别：	FET General Purpose Powers
表面贴装：	YES	Base Number Matches：	1

ATP216-TL-H 数据手册

Ordering number : EN8985A

ATP216

N-Channel Power MOSFET

http://onsemi.com

50V, 35A, 23m , Single ATPAK

Features

•

ON-resistance R (on)1=17m (typ.)

1.8V drive

Protection diode in

Slim package

Halogen free compliance

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

DSS

±10

GSS

Drain Current (PW 10 s)

PW 10 s, duty cycle 1%

105

≤

Allowable Power Dissipation

Channel Temperature

Tc=25 C

150

Tch

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

17.5

Note : 1 V =10V, L=100 H, I =18A

2 L 100 H, Single pulse

≤

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: ATPAK

7057-001

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

ATP216-TL-H

1.5

6.5

4.6

2.6

Packing Type: TL

Marking

0.4

ATP216

LOT No.

Electrical Connection

2,4

0.55

0.8

0.6

1 : Gate

0.4

2.3

2 : Drain

3 : Source

4 : Drain

ATPAK

Semiconductor Components Industries, LLC, 2013

July, 2013

62012 TKIM/51111PA TKIM TC-00002591 No.8985-1/7

12 3 4 5 6 7

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