ATP218
Ordering number : EN8970A
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ATP218
Features
•
•
ON-resistance R (on)1=2.9m (typ.)
2.5V drive
Protection diode in
Input Capacitance Ciss=6600pF(typ.)
Halogen free compliance
Ω
DS
•
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
30
DSS
V
±10
V
GSS
I
100
A
D
Drain Current (PW 10 s)
I
DP
PW 10 s, duty cycle 1%
300
A
≤
μ
≤
μ
≤
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
60
150
W
°
D
Tch
C
C
°
Storage Temperature
Tstg
--55 to +150
235
°
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
mJ
A
AS
I
AV
50
Note : 1 V =15V, L=100 H, I =50A
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP218-TL-H
1.5
6.5
4.6
2.6
Packing Type: TL
Marking
0.4
0.4
4
ATP218
LOT No.
TL
Electrical Connection
2,4
2
0.55
1
3
0.8
0.6
1 : Gate
0.4
2.3
2.3
2 : Drain
3 : Source
4 : Drain
1
SANYO : ATPAK
3
http://semicon.sanyo.com/en/network
62012 TKIM/51111PA TKIM TC-00002592
No.8970-1/7