是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | Is Samacsys: | N |
FET 技术: | JUNCTION | JESD-609代码: | e0 |
最高工作温度: | 175 °C | 极性/信道类型: | N-CHANNEL |
子类别: | Other Transistors | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
ATF-21170 | AGILENT | 0.5-6 GHz Low Noise Gallium Arsenide FET |
获取价格 |
|
ATF-21186 | AGILENT | 0.5-6 GHz General Purpose Gallium Arsenide FET |
获取价格 |
|
ATF-21186-STR | AGILENT | 0.5-6 GHz General Purpose Gallium Arsenide FET |
获取价格 |
|
ATF-21186-TR1 | AGILENT | 0.5-6 GHz General Purpose Gallium Arsenide FET |
获取价格 |
|
ATF22LV10C | ATMEL | High Performance E2 PLD |
获取价格 |
|
ATF22LV10C | MICROCHIP | The high-performance CMOS programmable logic device (PLD) with proven Microchip electrical |
获取价格 |