ATF-21186

更新时间： 2024-02-26 20:39:33

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体晶体管
页数	文件大小	规格书
8页	76K
描述
0.5-6 GHz General Purpose Gallium Arsenide FET

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技术参数
数据手册

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ATF-21186 技术参数

生命周期：	Obsolete	包装说明：	DISK BUTTON, O-PRDB-G4
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.82	其他特性：	LOW NOISE
配置：	SINGLE	最小漏源击穿电压：	5 V
最大漏极电流 (ID)：	0.2 A	FET 技术：	METAL SEMICONDUCTOR
最高频带：	C BAND	JESD-30 代码：	O-PRDB-G4
元件数量：	1	端子数量：	4
工作模式：	DEPLETION MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	DISK BUTTON	极性/信道类型：	N-CHANNEL
功耗环境最大值：	0.4 W	最小功率增益 (Gp)：	12 dB
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	RADIAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	GALLIUM ARSENIDE
Base Number Matches：	1

ATF-21186 数据手册

0.5–6 GHz General Purpose

Gallium Arsenide FET

Technical Data

ATF-21186

Features

• Low Noise Figure:

0.5dBTyp. @2GHz

Description

Hewlett–Packard’s ATF-21186 is a

low cost Gallium Arsenide

85 mil Plastic Surface

Mount Package

Schottky barrier-gate field effect

transistor housed in a surface

mount plastic package. This

general purpose device is

designed for use in low noise

amplifiers, gain stages, driver

amplifiers, and oscillators

operating over the VHF, UHF, and

microwave frequency ranges.

High gain with two volt operation

makes this part attractive for low

voltage, battery operated systems.

The low noise figure is

• High Output Power:

19 dBm Typ. P_1dB@ 2 GHz

• High MSG:

13.5dBTyp.@2GHz

• Low Cost Surface Mount

Plastic Package

• Tape-and-Reel Packaging

Option Available^[1]

Pin Configuration

SOURCE

Note:

GATE

DRAIN

1. Refer to “Tape-and-Reel Packaging for

Surface Mount Semiconductors”.

appropriate for commercial

systems demanding good

SOURCE

sensitivity, such as GPS receiver

front-ends and MMDS television

receivers. The output power is

sufficient for use as the driver

stage in many hand-held

transceivers operating in the

900 MHzthrough2.4GHzbands,

including in cellular phones, PCN,

and ISM band spread spectrum

applications.

MSG

This GaAs FET device has a

nominal 0.3 micron gate length

using airbridge interconnects

between drain fingers. Total gate

periphery is 750 microns. Proven

gold based metallization systems

and nitride passivation assure a

rugged, reliable device.

MAG

0.1

FREQUENCY (GHz)

ATF-21186 Insertion Power Gain,

Maximum Available Gain, and

Maximum Stable Gain vs. Frequency.

V_DS= 2 V, I_DS= 15 mA.

5-49

5965-8716E

12 3 4 5 6 7 8

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