ATF-21186-STR

更新时间： 2024-11-30 22:47:59

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体晶体管
页数	文件大小	规格书
8页	76K
描述
0.5-6 GHz General Purpose Gallium Arsenide FET

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中文翻译

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技术参数
数据手册

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ATF-21186-STR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.83	Is Samacsys：	N
FET 技术：	JUNCTION	JESD-609代码：	e0
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.4 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

ATF-21186-STR 数据手册

0.5–6 GHz General Purpose

Gallium Arsenide FET

Technical Data

ATF-21186

Features

• Low Noise Figure:

0.5dBTyp. @2GHz

Description

Hewlett–Packard’s ATF-21186 is a

low cost Gallium Arsenide

85 mil Plastic Surface

Mount Package

Schottky barrier-gate field effect

transistor housed in a surface

mount plastic package. This

general purpose device is

designed for use in low noise

amplifiers, gain stages, driver

amplifiers, and oscillators

operating over the VHF, UHF, and

microwave frequency ranges.

High gain with two volt operation

makes this part attractive for low

voltage, battery operated systems.

The low noise figure is

• High Output Power:

19 dBm Typ. P_1dB@ 2 GHz

• High MSG:

13.5dBTyp.@2GHz

• Low Cost Surface Mount

Plastic Package

• Tape-and-Reel Packaging

Option Available^[1]

Pin Configuration

SOURCE

Note:

GATE

DRAIN

1. Refer to “Tape-and-Reel Packaging for

Surface Mount Semiconductors”.

appropriate for commercial

systems demanding good

SOURCE

sensitivity, such as GPS receiver

front-ends and MMDS television

receivers. The output power is

sufficient for use as the driver

stage in many hand-held

transceivers operating in the

900 MHzthrough2.4GHzbands,

including in cellular phones, PCN,

and ISM band spread spectrum

applications.

MSG

This GaAs FET device has a

nominal 0.3 micron gate length

using airbridge interconnects

between drain fingers. Total gate

periphery is 750 microns. Proven

gold based metallization systems

and nitride passivation assure a

rugged, reliable device.

MAG

0.1

FREQUENCY (GHz)

ATF-21186 Insertion Power Gain,

Maximum Available Gain, and

Maximum Stable Gain vs. Frequency.

V_DS= 2 V, I_DS= 15 mA.

5-49

5965-8716E

12 3 4 5 6 7 8

中文翻译

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与ATF-21186-STR相关器件

型号	品牌	获取价格	描述	数据表
ATF-21186-TR1	AGILENT	获取价格	0.5-6 GHz General Purpose Gallium Arsenide FET
ATF22LV10C	ATMEL	获取价格	High Performance E2 PLD
ATF22LV10C	MICROCHIP	获取价格	The high-performance CMOS programmable logic device (PLD) with proven Microchip electrical
ATF22LV10C-10JC	ATMEL	获取价格	High Performance E2 PLD
ATF22LV10C-10JI	ATMEL	获取价格	High-performance Electrically Erasable Programmable Logic Device
ATF22LV10C-10JJ	ATMEL	获取价格	Flash PLD, 10ns, CMOS, PQCC28, PLASTIC, MS-018AB, LCC-28
ATF22LV10C-10JL	ATMEL	获取价格	Flash PLD, 10ns, CMOS, PQCC28, PLASTIC, MS-018AB, LCC-28
ATF22LV10C-10JU	ATMEL	获取价格	High-performance Electrically Erasable Programmable Logic Device
ATF22LV10C-10PC	ATMEL	获取价格	High Performance E2 PLD
ATF22LV10C-10PI	ATMEL	获取价格	High-performance Electrically Erasable Programmable Logic Device

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