ATF-21170

更新时间： 2024-11-30 22:47:59

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体晶体管放大器
页数	文件大小	规格书
3页	49K
描述
0.5-6 GHz Low Noise Gallium Arsenide FET

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

ATF-21170 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.87	Is Samacsys：	N
FET 技术：	JUNCTION	JESD-609代码：	e0
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
子类别：	Other Transistors	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

ATF-21170 数据手册

0.5–6 GHz Low Noise

Gallium Arsenide FET

Technical Data

ATF-21170

housed in a hermetic, high

Features

70 mil Package

reliability package. This device is

designed for use in low noise or

medium power amplifier applica-

tions in the 0.5-6 GHz frequency

range.

• Low Noise Figure:

0.9dBTypicalat4 GHz

• High Associated Gain:

13.0 dBTypicalat4 GHz

• High Output Power:

23.0 dBmTypicalP _1dBat4 GHz

This GaAs FET device has a

nominal 0.3 micron gate length

with a total gate periphery of

750 microns.Provengoldbased

metallization systems and nitride

passivation assure a rugged,

reliable device.

• Hermetic Gold-Ceramic

Microstrip Package

Description

The ATF-21170 is a high perfor-

mance gallium arsenide Schottky-

barrier-gate field effect transistor

Electrical Specifications, T_A= 25°C

Symbol

Parameters and Test Conditions

Units Min. Typ. Max.

NF_O

Optimum Noise Figure: V_DS= 3 V, I_DS= 20 mA

f=2.0GHz

f=4.0GHz

f=6.0GHz

0.6

0.9

1.2

1.1

G_A

Gain @ NF_O: V_DS= 3 V, I_DS= 20 mA

f=2.0GHz

f=4.0GHz

f=6.0GHz

16.0

13.0

10.0

12.0

P_{1 dB}

Power Output @ 1 dB Gain Compression:

V_DS=5V,I_DS=80mA

f=4.0GHz dBm

23.0

G_{1 dB}

g_m

1 dB Compressed Gain: V_DS= 5 V, I_DS= 80 mA

Transconductance: V_DS=3 V, V_GS= 0 V

Saturated Drain Current: V_DS= 3 V, V_GS= 0 V

Pinch-off Voltage: V_DS= 3 V, I_DS= 1 mA

f=4.0GHz

mmho 70

13.0

120

-1.5

I_DSS

V_P

200

-0.8

-3.0

5965-8718E

5-46

12 3

中文翻译

下载PDF

与ATF-21170相关器件

型号	品牌	获取价格	描述	数据表
ATF-21186	AGILENT	获取价格	0.5-6 GHz General Purpose Gallium Arsenide FET
ATF-21186-STR	AGILENT	获取价格	0.5-6 GHz General Purpose Gallium Arsenide FET
ATF-21186-TR1	AGILENT	获取价格	0.5-6 GHz General Purpose Gallium Arsenide FET
ATF22LV10C	ATMEL	获取价格	High Performance E2 PLD
ATF22LV10C	MICROCHIP	获取价格	The high-performance CMOS programmable logic device (PLD) with proven Microchip electrical
ATF22LV10C-10JC	ATMEL	获取价格	High Performance E2 PLD
ATF22LV10C-10JI	ATMEL	获取价格	High-performance Electrically Erasable Programmable Logic Device
ATF22LV10C-10JJ	ATMEL	获取价格	Flash PLD, 10ns, CMOS, PQCC28, PLASTIC, MS-018AB, LCC-28
ATF22LV10C-10JL	ATMEL	获取价格	Flash PLD, 10ns, CMOS, PQCC28, PLASTIC, MS-018AB, LCC-28
ATF22LV10C-10JU	ATMEL	获取价格	High-performance Electrically Erasable Programmable Logic Device