Datasheet > ATC600L8R2BT200T

ATC600L8R2BT200T

更新时间： 2024-11-27 01:21:47

品牌	Logo	应用领域
泰科 - TE		电容器
页数	文件大小	规格书
6页	794K
描述
PIN Diode Shunt Switch Element

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数据手册

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ATC600L8R2BT200T 数据手册

MSWSH-100-30

PIN Diode Shunt Switch Element

Features

Rev. V1



Supports up to 100 W when hot switched

Supports up to 300 W when cold switched

Low Insertion Loss: 0.15 dB up to 2.7 GHz

High Isolation: 31 dB up to 2.7 GHz

RoHS* Compliant

Description

A broadband, high linearity, high power shunt switch

element in a 10 x 4 mm bolt channel metal package.

This device is designed for WiMax, Wibro, WLAN,

TD-SCDMA and other wireless infrastructure

applications. It is also suited for 0.1 ~ 6 GHz

applications with up to 100 watts of power.

Electrical Specifications: T_A= +25°C

Parameter

Test Conditions

Units

Min.

700

—

Typ.

—

Max.

—

Breakdown Voltage (V_B)

Forward Voltage (V_F)

Junction Capacitance (C_J)

Series Resistance (R_S)

I-Region (W)

I_R= 10 µA

I_F= 100 mA

850

0.4

—

V_R= -50 V, 1 MHz

I_F= 100 mA, 500 MHz

I-Layer

—

0.6

—

µm

—

V_R= 50 V

2.3 ~ 2.7 GHz

<6.0 GHz

Insertion Loss (I_L)

0.15

0.35

0.25

0.45

—

I_F= 100 mA

2.3 ~ 2.7 GHz

6.0 GHz

Isolation (I_SO

)

—

V_R= 50 V

2.3 ~ 2.7 GHz

6.0 GHz

Input Return Loss (R_L)

—

Minority Carrier Lifetime (T_L)

I_F= 10 mA, I_R= 6 mA, @ 50%

—

3400

Absolute Maximum Ratings

Parameter

Absolute Maximum

Peak Current

1 A

5°C/W

Thermal Resistance

Junction Temperature

Storage Temperature

Solder Temperature

+175°C

-65°C to +150°C

+230°C for 30 seconds

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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