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ATC600S5R6CW PDF预览

ATC600S5R6CW

更新时间： 2024-11-27 01:06:23
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
20页 686K
描述
RF LDMOS Wideband Integrated Power Amplifiers

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ATC600S5R6CW 数据手册

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Document Number: MWIC930  
Rev. 5, 5/2006  
Freescale Semiconductor  
Replaced by MWIC930NR1(GNR1). There are no form, fit or function changes with this part  
replacement. N suffix added to part number to indicate transition to lead-free terminations.  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
The MWIC930 wideband integrated circuit is designed for CDMA and  
GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage (26 to  
28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its  
wideband On-Chip integral matching circuitry makes it usable from 790 to  
1000 MHz. The linearity performances cover all modulations for cellular  
applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA.  
MWIC930R1  
MWIC930GR1  
746-960 MHz, 30 W, 26-28 V  
SINGLE N-CDMA, GSM/GSM EDGE  
RF LDMOS WIDEBAND INTEGRATED  
POWER AMPLIFIERS  
Final Application  
• Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2  
=
240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921-960 MHz)  
Power Gain — 30 dB  
Power Added Efficiency — 45%  
Driver Application  
• Typical Single-Carrier N-CDMA Performance: VDD = 27 Volts, IDQ1  
90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency Band  
(865-894 MHz), IS -95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),  
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%  
Probability on CCDF.  
=
CASE 1329-09  
TO-272 WB-16  
PLASTIC  
Power Gain — 31 dB  
Power Added Efficiency — 21%  
ACPR @ 750 kHz Offset — -52 dBc in 30 kHz Bandwidth  
MWIC930R1  
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output  
Power  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• On-Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)  
• Integrated Quiescent Current Temperature Compensation with  
Enable/Disable Function  
• On-Chip Current Mirror gm Reference FET for Self Biasing Application (1)  
• Integrated ESD Protection  
• 200°C Capable Plastic Package  
CASE 1329A-03  
TO-272 WB-16 GULL  
PLASTIC  
MWIC930GR1  
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
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Note: Exposed backside flag is source  
terminal for transistors.  
V
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Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1987.  
© Freescale Semiconductor, Inc., 2006. All rights reserved.  
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