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ATC600S0R2BT250XT PDF预览

ATC600S0R2BT250XT

更新时间: 2024-11-27 01:09:31
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 466K
描述
RF LDMOS Wideband Integrated Power Amplifiers

ATC600S0R2BT250XT 数据手册

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Document Number: A3I35D012WN  
Rev. 0, 11/2018  
NXP Semiconductors  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
A3I35D012WNR1  
A3I35D012WGNR1  
The A3I35D012WN wideband integrated circuit is designed for cellular base  
station applications requiring very wide instantaneous bandwidth capability.  
This circuit includes on--chip matching that makes it usable from 3200 to 4000  
MHz. Its multi--stage structure is rated for 20 to 32 V operation and covers all  
typical cellular base station modulation formats.  
3200–4000 MHz, 1.8 W AVG., 28 V  
AIRFAST RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIERS  
3500 MHz  
Typical Single--Carrier W--CDMA Characterization Performance:  
DD = 28 Vdc, IDQ1(A+B) = 36 mA, IDQ2(A+B) = 138 mA, Pout = 1.8 W Avg.,  
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)  
V
TO--270WB--17  
PLASTIC  
A3I35D012WNR1  
G
PAE  
(%)  
ACPR  
(dBc)  
ps  
Frequency  
3400 MHz  
3500 MHz  
3600 MHz  
3700 MHz  
3800 MHz  
(dB)  
28.3  
28.0  
27.9  
27.8  
27.8  
16.5  
17.3  
17.8  
17.8  
17.5  
–45.2  
–45.1  
–44.8  
–44.5  
–44.7  
TO--270WBG--17  
PLASTIC  
A3I35D012WGNR1  
Features  
Designed for wide instantaneous bandwidth applications  
On--chip matching (50 ohm input, DC blocked)  
Integrated quiescent current temperature compensation with  
enable/disable function (2)  
Designed for digital predistortion error correction systems  
Optimized for Doherty applications  
1. All data measured in fixture with device soldered to heatsink.  
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current  
Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.  
2018 NXP B.V.  

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