Datasheet > ATC600S0R3BT250XT

ATC600S0R3BT250XT

更新时间： 2024-11-27 01:09:31

品牌	Logo	应用领域
恩智浦 - NXP		电容器
页数	文件大小	规格书
13页	466K
描述
RF LDMOS Wideband Integrated Power Amplifiers

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Document Number: A3I35D012WN

Rev. 0, 11/2018

NXP Semiconductors

Technical Data

RF LDMOS Wideband Integrated

Power Amplifiers

A3I35D012WNR1

A3I35D012WGNR1

The A3I35D012WN wideband integrated circuit is designed for cellular base

station applications requiring very wide instantaneous bandwidth capability.

This circuit includes on--chip matching that makes it usable from 3200 to 4000

MHz. Its multi--stage structure is rated for 20 to 32 V operation and covers all

typical cellular base station modulation formats.

3200–4000 MHz, 1.8 W AVG., 28 V

AIRFAST RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

3500 MHz



Typical Single--Carrier W--CDMA Characterization Performance:

_DD= 28 Vdc, I_DQ1(A+B)= 36 mA, I_DQ2(A+B)= 138 mA, P_out= 1.8 W Avg.,

Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ⁽¹⁾

TO--270WB--17

PLASTIC

A3I35D012WNR1

PAE

(%)

ACPR

(dBc)

Frequency

3400 MHz

3500 MHz

3600 MHz

3700 MHz

3800 MHz

(dB)

28.3

28.0

27.9

27.8

16.5

17.3

17.8

17.5

–45.2

–45.1

–44.8

–44.5

–44.7

TO--270WBG--17

PLASTIC

A3I35D012WGNR1

Features



Designed for wide instantaneous bandwidth applications

On--chip matching (50 ohm input, DC blocked)

Integrated quiescent current temperature compensation with

enable/disable function ⁽²⁾



Designed for digital predistortion error correction systems

Optimized for Doherty applications

1. All data measured in fixture with device soldered to heatsink.

2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current

Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.

 2018 NXP B.V.

A3I35D012WNR1 A3I35D012WGNR1

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...13

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