Datasheet > ATC600S2R2CT250XT

ATC600S2R2CT250XT

更新时间： 2024-11-29 01:23:51

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恩智浦 - NXP		/
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RF LDMOS Wideband Integrated Power Amplifier

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Document Number: MW7IC008N

Rev. 3, 12/2013

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifier

The MW7IC008N wideband integrated circuit is designed with on--chip

matching that makes it usable from 20 to 1000 MHz. This multi--stage

structure is rated for 24 to 32 volt operation and covers most narrow

bandwidth communication application formats.

MW7IC008NT1

Driver Applications

100--1000 MHz, 8 W PEAK, 28 V

RF LDMOS WIDEBAND



Typical CW Performance: V_DD= 28 Volts, I_DQ1= 25 mA, I_DQ2= 75 mA

INTEGRATED POWER AMPLIFIER

PAE

(%)

Frequency

(dB)

23.5

22.5

23.5

100 MHz @ 11 W CW

400 MHz @ 9 W CW

900 MHz @ 6.5 W CW



Capable of Handling 10:1 VSWR, @ 32 Vdc, 900 MHz, P_out= 6.5 Watts CW

(3 dB Input Overdrive from Rated P_out

Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 8 Watts CW

P_out@ 900 MHz

)

PQFN 8  8

PLASTIC

Typical P_out@ 1 dB Compression Point ≃ 11 Watts CW @ 100 MHz,

9 Watts CW @ 400 MHz, 6.5 Watts CW @ 900 MHz

Features



Broadband, Single Matching Network from 20 to 1000 MHz

Integrated Quiescent Current Temperature Compensation with

Enable/Disable Function ⁽¹⁾



Integrated ESD Protection

In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13--inch Reel.

TTS1

TTS2

(1)

Quiescent Current

24 23 22 21 20 19

Temperature Compensation

GLS1

GS2

GS1

inS1

outS2 DS2

inS1

GS1

outS2 DS2

8 9 10 11 12

inS2

outS1 DS1

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 orAN1987.

MW7IC008NT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...13

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