Datasheet > AT93C46D-TP25-T

AT93C46D-TP25-T

更新时间： 2024-09-16 03:03:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数	文件大小	规格书
17页	708K
描述
EEPROM, 64X16, Serial, CMOS, PDSO8, 4.4 MM, HALOGEN AND LEAD FREE, PLASTIC, MO-153, TSSOP-8

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AT93C46D-TP25-T 数据手册

AT93C46D

3-wire Automotive Temperature Serial EEPROMs

1K (128 x 8 or 64 x 16)

DATASHEET

Features

 Medium-voltage and Standard-voltage Operation

2.5 (V_CC= 2.5V to 5.5V)

 User-selectable Internal Organization

1K: 128 x 8 or 64 x 16

 3-wire Serial Interface

 2MHz Clock Rate (5V)

 Self-timed Write Cycle (10ms max)

 High Reliability

Endurance: 1,000,000 Write Cycles

Data Retention: 100 Years

 8-lead JEDEC SOIC and TSSOP Packages

Description

The AT93C46D provides 1,024 bits of serial electrically erasable programmable

read only memory (EEPROM) organized as 64 words of 16 bits each, when the

ORG pin is connected to V_CCand 128 words of 8 bits each when it is tied to

ground. The device is optimized for use in many automotive applications where

low power and low voltage operations are essential. The AT93C46D is available

in space-saving 8-lead TSSOP and 8-lead JEDEC SOIC packages. The

AT93C46D is enabled through the Chip Select pin (CS), and accessed via a

3-wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift

Clock (SK). Upon receiving a READ instruction at DI, the address is decoded and

the data is clocked out serially on the data output pin DO. The WRITE cycle is

completely self-timed and no separate erase cycle is required before write. The

Write cycle is only enabled when it is in the Erase/Write Enable state. When CS is

brought “high” following the initiation of a write cycle, the DO pin outputs the

Ready/Busy status.

Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014

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