Features
• 64-megabit (4M x 16) Flash Memory
• 2.7V - 3.6V Read/Write
• High Performance
– Asynchronous Access Time – 70 ns
– Page Mode Read Time – 20 ns
• Sector Erase Architecture
– Eight 4K Word Sectors with Individual Write Lockout
– 32K Word Main Sectors with Individual Write Lockout
• Typical Sector Erase Time: 32K Word Sectors – 500 ms; 4K Word Sectors – 100 ms
• Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming Data from Any Sector by Suspending Erase
of a Different Sector
64-megabit
(4M x 16)
– Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation
Page Mode
2.7-volt Flash
Memory
– 30 mA Active
– 10 µA Standby
• 1.8V I/O Option Reduces Overall System Power
• Data Polling and Toggle Bit for End of Program Detection
• VPP Pin for Write Protection and Accelerated Program/Erase Operations
• RESET Input for Device Initialization
• TSOP or CBGA Package
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Common Flash Interface (CFI)
AT49BV640
AT49BV640T
Description
Not Recommended
The AT49BV640(T) is a 2.7-volt 64-megabit Flash memory. The memory is divided
into multiple sectors for erase operations. The device can be read or reprogrammed
off a single 2.7V power supply, making it ideally suited for in-system programming.
The output voltage can be separately controlled down to 1.65V through the VCCQ
supply pin. This device can operate in the asynchronous or page read mode.
for New Design
Contact Atmel to discuss
the latest design in trends
and options
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors.
The end of a program or an erase cycle is detected by Data Polling or the toggle bit.
The VPP pin provides data protection and faster programming and erase times. When
the VPP input is below 0.8V, the program and erase functions are inhibited. When VPP
is at 1.65V or above, normal program and erase operations can be performed. With
VPP at 12.0V, the program and erase operations are accelerated.
With VPP at 12V, a six-byte command (Enter Single Pulse Program Mode) to remove
the requirement of entering the three-byte program sequence is offered to further
improve programming time. After entering the six-byte code, only single pulses on the
write control lines are required for writing into the device. This mode (Single Pulse
Word Program) is exited by powering down the device, by taking the RESET pin to
GND or by a high-to-low transition on the VPP input. Erase, Erase Suspend/Resume,
Program Suspend/Resume and Read Reset commands will not work while in this
mode; if entered they will result in data being programmed into the device. It is not rec-
ommended that the six-byte code reside in the software of the final product but only
exist in external programming code.
Rev. 3366B–FLASH–8/03
1