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AT49BV640-70TJ PDF预览

AT49BV640-70TJ

更新时间: 2024-11-10 03:39:47
品牌 Logo 应用领域
爱特美尔 - ATMEL 光电二极管
页数 文件大小 规格书
30页 376K
描述
Flash, 4MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48

AT49BV640-70TJ 数据手册

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Features  
64-megabit (4M x 16) Flash Memory  
2.7V - 3.6V Read/Write  
High Performance  
– Asynchronous Access Time – 70 ns  
– Page Mode Read Time – 20 ns  
Sector Erase Architecture  
– Eight 4K Word Sectors with Individual Write Lockout  
– 32K Word Main Sectors with Individual Write Lockout  
Typical Sector Erase Time: 32K Word Sectors – 500 ms; 4K Word Sectors – 100 ms  
Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming Data from Any Sector by Suspending Erase  
of a Different Sector  
64-megabit  
(4M x 16)  
– Supports Reading Any Word by Suspending Programming of Any Other Word  
Low-power Operation  
Page Mode  
2.7-volt Flash  
Memory  
– 30 mA Active  
– 10 µA Standby  
1.8V I/O Option Reduces Overall System Power  
Data Polling and Toggle Bit for End of Program Detection  
VPP Pin for Write Protection and Accelerated Program/Erase Operations  
RESET Input for Device Initialization  
TSOP or CBGA Package  
Top or Bottom Boot Block Configuration Available  
128-bit Protection Register  
Common Flash Interface (CFI)  
AT49BV640  
AT49BV640T  
Description  
Not Recommended  
The AT49BV640(T) is a 2.7-volt 64-megabit Flash memory. The memory is divided  
into multiple sectors for erase operations. The device can be read or reprogrammed  
off a single 2.7V power supply, making it ideally suited for in-system programming.  
The output voltage can be separately controlled down to 1.65V through the VCCQ  
supply pin. This device can operate in the asynchronous or page read mode.  
for New Design  
Contact Atmel to discuss  
the latest design in trends  
and options  
To increase the flexibility of the device, it contains an Erase Suspend and Program  
Suspend feature. This feature will put the erase or program on hold for any amount of  
time and let the user read data from or program data to any of the remaining sectors.  
The end of a program or an erase cycle is detected by Data Polling or the toggle bit.  
The VPP pin provides data protection and faster programming and erase times. When  
the VPP input is below 0.8V, the program and erase functions are inhibited. When VPP  
is at 1.65V or above, normal program and erase operations can be performed. With  
VPP at 12.0V, the program and erase operations are accelerated.  
With VPP at 12V, a six-byte command (Enter Single Pulse Program Mode) to remove  
the requirement of entering the three-byte program sequence is offered to further  
improve programming time. After entering the six-byte code, only single pulses on the  
write control lines are required for writing into the device. This mode (Single Pulse  
Word Program) is exited by powering down the device, by taking the RESET pin to  
GND or by a high-to-low transition on the VPP input. Erase, Erase Suspend/Resume,  
Program Suspend/Resume and Read Reset commands will not work while in this  
mode; if entered they will result in data being programmed into the device. It is not rec-  
ommended that the six-byte code reside in the software of the final product but only  
exist in external programming code.  
Rev. 3366B–FLASH–8/03  

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