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AT49BV080-20TC PDF预览

AT49BV080-20TC

更新时间: 2024-11-07 23:04:23
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存电池存储内存集成电路光电二极管异步传输模式ATM
页数 文件大小 规格书
12页 204K
描述
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory

AT49BV080-20TC 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:PLASTIC, TSOP-40
针数:40Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.92Is Samacsys:N
最长访问时间:200 ns其他特性:HARDWARE DATA PROTECTION; BYTE PROGRAMMABLE; BOTTOM BOOT BLOCK
启动块:BOTTOM命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G40
JESD-609代码:e0长度:18.4 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:1,1端子数量:40
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP40,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,1008K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

AT49BV080-20TC 数据手册

 浏览型号AT49BV080-20TC的Datasheet PDF文件第2页浏览型号AT49BV080-20TC的Datasheet PDF文件第3页浏览型号AT49BV080-20TC的Datasheet PDF文件第4页浏览型号AT49BV080-20TC的Datasheet PDF文件第5页浏览型号AT49BV080-20TC的Datasheet PDF文件第6页浏览型号AT49BV080-20TC的Datasheet PDF文件第7页 
Features  
Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)  
Fast Read Access Time - 120 ns  
Internal Program Control and Timer  
16K bytes Boot Block With Lockout  
Fast Erase Cycle Time - 10 seconds  
Byte-By-Byte Programming - 30 µs/Byte Typical  
Hardware Data Protection  
DATA Polling For End Of Program Detection  
Low Power Dissipation  
8-Megabit  
- 25 mA Active Current  
- 50 µA CMOS Standby Current  
(1M x 8)  
Typical 10,000 Write Cycles  
Small Packaging  
- 8 x 14 mm CBGA  
Single 2.7-volt  
Battery-Voltage  
Flash Memory  
Description  
The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 mega-  
bits of memory are organized as 1,024,576 words by 8 bits. Manufactured with At-  
mel’s advanced nonvolatile CMOS technology, the devices offer access times to 120  
ns with power dissipation of just 90 mW over the commercial temperature range.  
When the device is deselected, the CMOS standby current is less than 50 µA.  
AT49BV080  
AT49BV080T  
AT49LV080  
AT49LV080T  
The device contains a user-enabled "boot block" protection feature. Two versions of  
the feature are available: the AT49BV/LV080 locates the boot block at lowest order  
addresses ("bottom boot"); the AT49BVLV080T locates it at highest order addresses  
("top boot").  
(continued)  
TSOP Top View  
Pin Configurations  
Type 1  
Pin Name  
A0 - A19  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Reset  
OE  
WE  
RESET  
RDY/BUSY  
I/O0 - I/O7  
Ready/Busy Output  
Data Inputs/Outputs  
CBGA Top View  
SOIC  
1
2
3
4
5
6
7
NC  
RESET  
A11  
A10  
A9  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
VCC  
CE  
2
3
A12  
A13  
A14  
A15  
A16  
A17  
A18  
A19  
NC  
4
5
A
B
C
D
E
F
A8  
6
A5 A8 A11 NC A12 A15 A17  
A4 A7 A10 VCC A13 NC A18  
A6 A9 RST CE A14 A16 A19  
A3 I/O1 NC VCC I/O4 I/O7 NC  
A2 A0 I/O3 GND I/O6 OE NC  
A1 I/O0 I/O2 GND I/O5 RY/BY WE  
A7  
7
A6  
8
A5  
9
A4  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
NC  
NC  
NC  
A3  
NC  
A2  
NC  
A1  
WE  
A0  
OE  
I/O0  
I/O1  
I/O2  
I/O3  
GND  
GND  
RDY/BUSY  
I/O7  
I/O6  
I/O5  
I/O4  
VCC  
0812A–8/97  

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