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AT49BV040B-70TU PDF预览

AT49BV040B-70TU

更新时间： 2024-11-08 14:40:59
品牌 Logo 应用领域
爱特美尔 - ATMEL ATM异步传输模式光电二极管内存集成电路
页数 文件大小 规格书
20页 328K
描述
Flash, 512KX8, 70ns, PDSO32, 8 X 20 MM, GREEN, PLASTIC, MO-142BD, TSOP1-32

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中文翻译

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AT49BV040B-70TU 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：8 X 20 MM, GREEN, PLASTIC, MO-142BD, TSOP1-32
针数：32Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.81Is Samacsys：N
最长访问时间：70 ns启动块：BOTTOM
JESD-30 代码：R-PDSO-G32JESD-609代码：e3
长度：18.4 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：8
湿度敏感等级：3功能数量：1
端子数量：32字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX8封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260编程电压：2.7 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30类型：NOR TYPE
宽度：8 mmBase Number Matches：1

AT49BV040B-70TU 数据手册

 浏览型号AT49BV040B-70TU的Datasheet PDF文件第2页浏览型号AT49BV040B-70TU的Datasheet PDF文件第3页浏览型号AT49BV040B-70TU的Datasheet PDF文件第4页浏览型号AT49BV040B-70TU的Datasheet PDF文件第5页浏览型号AT49BV040B-70TU的Datasheet PDF文件第6页浏览型号AT49BV040B-70TU的Datasheet PDF文件第7页 
Features  
• Single Supply for Read and Write: 2.7 to 3.6V  
• Fast Read Access Time – 70 ns  
• Internal Program Control and Timer  
• Flexible Sector Architecture  
– One 16K Bytes Boot Sector with Programming Lockout  
– Two 8K Bytes Parameter Sectors  
– Eight Main Memory Sectors (One 32K Bytes, Seven 64K Bytes)  
• Fast Erase Cycle Time – 8 Seconds  
• Byte-by-Byte Programming – 12 µs/Byte Typical  
• Hardware Data Protection  
4-megabit  
(512K x 8)  
• DATA Polling or Toggle Bit for End of Program Detection  
• Low Power Dissipation  
Single 2.7-volt  
Battery-Voltage  
Flash Memory  
– 20 mA Active Current  
– 25 µA CMOS Standby Current  
• Minimum 100,000 Write Cycles  
1. Description  
The AT49BV040B is a 2.7-volt-only in-system reprogrammable Flash Memory. Its  
4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with  
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to  
70 ns with power dissipation of just 72 mW over the commercial temperature range.  
AT49BV040B  
When the device is deselected, the CMOS standby current is less than 25 µA. To  
allow for simple in-system reprogrammability, the AT49BV040B does not require high  
input voltages for programming. Three-volt-only commands determine the read and  
programming operation of the device. Reading data out of the device is similar to  
reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus conten-  
tion. Reprogramming the AT49BV040B is performed by erasing a sector of data and  
then programming on a byte by byte basis. The byte programming time is a fast 12 µs.  
The end of a program or erase cycle can be optionally detected by the DATA polling  
or toggle bit feature. Once the end of a byte program cycle has been detected, a new  
access for a read or program can begin. The typical number of program and erase  
cycles is in excess of 100,000 cycles.  
The device is erased by executing a chip erase or a sector erase command sequence;  
the device internally controls the erase operations. The memory array of the  
AT49BV040B is organized into two 8K byte parameter sectors, eight main memory  
sectors, and one boot sector.  
The device has the capability to protect the data in the boot sector; this feature is  
enabled by a command sequence. The 16K-byte boot sector includes a reprogram-  
ming lock out feature to provide data integrity. The boot sector is designed to contain  
user secure code, and when the feature is enabled, the boot sector is permanently  
protected from being reprogrammed.  
3499A–FLASH–9/05  
1234567...20

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